Abstract
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.
Original language | English (US) |
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Article number | 222103 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 22 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)