Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

S. Tongay, T. Schumann, A. F. Hebard

    Research output: Contribution to journalArticlepeer-review

    125 Scopus citations

    Abstract

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

    Original languageEnglish (US)
    Article number222103
    JournalApplied Physics Letters
    Volume95
    Issue number22
    DOIs
    StatePublished - 2009

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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