Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

S. Tongay, T. Schumann, A. F. Hebard

Research output: Contribution to journalArticle

119 Scopus citations


We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

Original languageEnglish (US)
Article number222103
JournalApplied Physics Letters
Issue number22
StatePublished - Dec 18 2009
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this