Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

Sefaattin Tongay, T. Schumann, A. F. Hebard

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

Original languageEnglish (US)
Article number222103
JournalApplied Physics Letters
Volume95
Issue number22
DOIs
StatePublished - 2009
Externally publishedYes

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Schottky diodes
silicon carbides
gallium
graphite
graphene
silicon
metalloids
thermionic emission
electrical measurement
capacitance
diodes
electrodes
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates. / Tongay, Sefaattin; Schumann, T.; Hebard, A. F.

In: Applied Physics Letters, Vol. 95, No. 22, 222103, 2009.

Research output: Contribution to journalArticle

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