Graphene/GaN Schottky diodes: Stability at elevated temperatures

S. Tongay, M. Lemaitre, T. Schumann, K. Berke, B. R. Appleton, B. Gila, A. F. Hebard

Research output: Contribution to journalArticle

79 Scopus citations

Abstract

Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene.

Original languageEnglish (US)
Article number102102
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
StatePublished - Sep 5 2011

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tongay, S., Lemaitre, M., Schumann, T., Berke, K., Appleton, B. R., Gila, B., & Hebard, A. F. (2011). Graphene/GaN Schottky diodes: Stability at elevated temperatures. Applied Physics Letters, 99(10), [102102]. https://doi.org/10.1063/1.3628315