GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS.

Stephen Krause, S. R. Wilson, W. M. Paulson, R. B. Gregory

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Polycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed. A bimodal distribution of grain sizes was present in the as-deposited films. The grain growth processes are described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages721-726
Number of pages6
ISBN (Print)0931837006
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume35
ISSN (Print)0272-9172

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Krause, S., Wilson, S. R., Paulson, W. M., & Gregory, R. B. (1985). GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. In D. K. Biegelsen, & C. V. Shank (Eds.), Materials Research Society Symposia Proceedings (pp. 721-726). (Materials Research Society Symposia Proceedings; Vol. 35). Materials Research Soc.