GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS.

Stephen Krause, S. R. Wilson, W. M. Paulson, R. B. Gregory

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Polycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed. A bimodal distribution of grain sizes was present in the as-deposited films. The grain growth processes are described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages721-726
Number of pages6
Volume35
ISBN (Print)0931837006
StatePublished - 1985

Fingerprint

Grain growth
Polysilicon
Annealing
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Krause, S., Wilson, S. R., Paulson, W. M., & Gregory, R. B. (1985). GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. In D. K. Biegelsen, & C. V. Shank (Eds.), Materials Research Society Symposia Proceedings (Vol. 35, pp. 721-726). Pittsburgh, PA, USA: Materials Research Soc.

GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. / Krause, Stephen; Wilson, S. R.; Paulson, W. M.; Gregory, R. B.

Materials Research Society Symposia Proceedings. ed. / D.K. Biegelsen; Charles V. Shank. Vol. 35 Pittsburgh, PA, USA : Materials Research Soc, 1985. p. 721-726.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krause, S, Wilson, SR, Paulson, WM & Gregory, RB 1985, GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. in DK Biegelsen & CV Shank (eds), Materials Research Society Symposia Proceedings. vol. 35, Materials Research Soc, Pittsburgh, PA, USA, pp. 721-726.
Krause S, Wilson SR, Paulson WM, Gregory RB. GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. In Biegelsen DK, Shank CV, editors, Materials Research Society Symposia Proceedings. Vol. 35. Pittsburgh, PA, USA: Materials Research Soc. 1985. p. 721-726
Krause, Stephen ; Wilson, S. R. ; Paulson, W. M. ; Gregory, R. B. / GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS. Materials Research Society Symposia Proceedings. editor / D.K. Biegelsen ; Charles V. Shank. Vol. 35 Pittsburgh, PA, USA : Materials Research Soc, 1985. pp. 721-726
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