@inproceedings{2b7d667da18140b49808cb60c63262db,
title = "GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS.",
abstract = "Polycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed. A bimodal distribution of grain sizes was present in the as-deposited films. The grain growth processes are described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times.",
author = "Stephen Krause and Wilson, {S. R.} and Paulson, {W. M.} and Gregory, {R. B.}",
year = "1985",
language = "English (US)",
isbn = "0931837006",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "721--726",
editor = "D.K. Biegelsen and Shank, {Charles V.}",
booktitle = "Materials Research Society Symposia Proceedings",
}