Abstract

Polycrystalline silicon films deposited on oxidized wafer surfaces were implanted with As and annealed on a Varian IA-200 rapid thermal annealer. The effects of annealing conditions on resultant grain size of original as-deposited columnar grains are presented with a modified model for interfacially driven grain growth. During an initial temperature rise to 910 degree C the original grain size (39 nm) and dopant profile are not significantly altered. At 1145 degree C the grains have grown to 90 nm and the As is uniformly distributed throughout the film. Additional annealing to 1300 degree C in 20 s causes grains to grow to 260 nm. Further grain growth is retarded due to the 300-nm film thickness. During annealing of unencapsulated films a substantial loss of As results in a lower rate of grain growth. When grain size increases, Hall mobility increases and resistivity decreases.

Original languageEnglish (US)
Pages (from-to)778-780
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number7
DOIs
StatePublished - Oct 1 1984

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silicon films
annealing
grain size
film thickness
wafers
electrical resistivity
causes
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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GRAIN GROWTH DURING TRANSIENT ANNEALING OF As-IMPLANTED POLYCRYSTALLINE SILICON FILMS. / Krause, Stephen; Wilson, S. R.; Paulson, W. M.; Gregory, R. B.

In: Applied Physics Letters, Vol. 45, No. 7, 01.10.1984, p. 778-780.

Research output: Contribution to journalArticle

Krause, Stephen ; Wilson, S. R. ; Paulson, W. M. ; Gregory, R. B. / GRAIN GROWTH DURING TRANSIENT ANNEALING OF As-IMPLANTED POLYCRYSTALLINE SILICON FILMS. In: Applied Physics Letters. 1984 ; Vol. 45, No. 7. pp. 778-780.
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