GRAIN GROWTH DURING TRANSIENT ANNEALING OF As-IMPLANTED POLYCRYSTALLINE SILICON FILMS.

Stephen Krause, S. R. Wilson, W. M. Paulson, R. B. Gregory

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Abstract

Polycrystalline silicon films deposited on oxidized wafer surfaces were implanted with As and annealed on a Varian IA-200 rapid thermal annealer. The effects of annealing conditions on resultant grain size of original as-deposited columnar grains are presented with a modified model for interfacially driven grain growth. During an initial temperature rise to 910 degree C the original grain size (39 nm) and dopant profile are not significantly altered. At 1145 degree C the grains have grown to 90 nm and the As is uniformly distributed throughout the film. Additional annealing to 1300 degree C in 20 s causes grains to grow to 260 nm. Further grain growth is retarded due to the 300-nm film thickness. During annealing of unencapsulated films a substantial loss of As results in a lower rate of grain growth. When grain size increases, Hall mobility increases and resistivity decreases.

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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