Abstract
Polycrystalline silicon films deposited on oxidized wafer surfaces were implanted with As and annealed on a Varian IA-200 rapid thermal annealer. The effects of annealing conditions on resultant grain size of original as-deposited columnar grains are presented with a modified model for interfacially driven grain growth. During an initial temperature rise to 910°C the original grain size (39 nm) and dopant profile are not significantly altered. At 1145°C the grains have grown to 90 nm and the As is uniformly distributed throughout the film. Additional annealing to 1300°C in 20 s causes grains to grow to 260 nm. Further grain growth is retarded due to the 300-nm film thickness. During annealing of unencapsulated films a substantial loss of As results in a lower rate of grain growth. When grain size increases, Hall mobility increases and resistivity decreases.
Original language | English (US) |
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Pages (from-to) | 778-780 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 45 |
Issue number | 7 |
DOIs | |
State | Published - 1984 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)