Grain boundary passivation in multicrystalline silicon using hydrogen sulfide

Arunodoy Saha, Haifeng Zhang, Wen Cheng Sun, Meng Tao

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A new grain boundary passivation method for multicrystalline silicon using hydrogen sulfide has been developed in this work. It has the added benefit of both hydrogen and sulfur for grain boundary passivation. Minority carrier lifetime of the samples is measured to monitor the effect of passivation. It is found that sulfur passivation takes place at higher temperatures, ∼100.C higher, than hydrogen passivation, and sulfur passivation results in much higher lifetime gains than hydrogen passivation. Post-annealing in ambient further improves the lifetime of the samples, which is attributed to improved surface passivation on the p-type silicon samples by aluminum oxide. The highest lifetime gain achieved after post-annealing is 6750% over the control sample for hydrogen sulfide annealed samples vs. ∼2400% for forming gas annealed samples. Post-annealing also improves the stability of the passivation.

Original languageEnglish (US)
Pages (from-to)P186-P189
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number7
DOIs
Publication statusPublished - 2015

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this