Grain boundaries in silicon nitride

K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The article presents a study on the grain boundaries of silicon nitride matrix in Si 3N 4/SiC(w) composites and polycrystalline CVD silicon nitride by high spatial resolution position resolved EELS and HREM imaging. The results showed no amorphous layer was seen at the grain boundary within the resolution limit, but a disordered region with structural width approximately equal to the SiN 4 tetrahedron size was seen. It is revealed that this disordered region is oxygen rich. The presence of oxygen is attributed upon the presence of sintering aids and/or impurity content of the bulk material.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
PublisherPubl by San Francisco Press Inc
Pages920-921
Number of pages2
StatePublished - 1993
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

Other

OtherProceedings of the 51st Annual Meeting Microscopy Society of America
CityCincinnati, OH, USA
Period8/1/938/6/93

ASJC Scopus subject areas

  • Engineering(all)

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    Chowdhury, K. D., Carpenter, R., & Braue, W. (1993). Grain boundaries in silicon nitride. In Proceedings - Annual Meeting, Microscopy Society of America (pp. 920-921). Publ by San Francisco Press Inc.