Abstract
The article presents a study on the grain boundaries of silicon nitride matrix in Si 3N 4/SiC(w) composites and polycrystalline CVD silicon nitride by high spatial resolution position resolved EELS and HREM imaging. The results showed no amorphous layer was seen at the grain boundary within the resolution limit, but a disordered region with structural width approximately equal to the SiN 4 tetrahedron size was seen. It is revealed that this disordered region is oxygen rich. The presence of oxygen is attributed upon the presence of sintering aids and/or impurity content of the bulk material.
| Original language | English (US) |
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| Title of host publication | Proceedings - Annual Meeting, Microscopy Society of America |
| Publisher | Publ by San Francisco Press Inc |
| Pages | 920-921 |
| Number of pages | 2 |
| State | Published - 1993 |
| Event | Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993 |
Other
| Other | Proceedings of the 51st Annual Meeting Microscopy Society of America |
|---|---|
| City | Cincinnati, OH, USA |
| Period | 8/1/93 → 8/6/93 |
ASJC Scopus subject areas
- General Engineering