GR-FET application for high-frequency detection device

Akram M. Mahjoub, Alec Nicol, Takuto Abe, Takahiro Ouchi, Yuhei Iso, Michio Kida, Noboyuki Aoki, Katsuhiko Miyamoto, Takashige Omatsu, Jonathan P. Bird, David K. Ferry, Koji Ishibashi, Yuichi Ochiai

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

Original languageEnglish (US)
Article number22
Pages (from-to)1-8
Number of pages8
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Ambient condition
  • Bolometric effect
  • Frequency response
  • Graphene
  • Microwave application
  • Nonlinear effect
  • Terahertz detection

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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