GR-FET application for high-frequency detection device

Akram M. Mahjoub; Alec Nicol; Takuto Abe; Takahiro Ouchi; Yuhei Iso; Michio Kida; Noboyuki Aoki; Katsuhiko Miyamoto; Takashige Omatsu; Jonathan P. Bird; David K. Ferry; Koji Ishibashi; Yuichi Ochiai

doi:10.1186/1556-276X-8-22

GR-FET application for high-frequency detection device

Akram M. Mahjoub, Alec Nicol, Takuto Abe, Takahiro Ouchi, Yuhei Iso, Michio Kida, Noboyuki Aoki, Katsuhiko Miyamoto, Takashige Omatsu, Jonathan P. Bird, David K. Ferry, Koji Ishibashi, Yuichi Ochiai

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

Original language	English (US)
Article number	22
Pages (from-to)	1-8
Number of pages	8
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-22
State	Published - 2013

Keywords

Ambient condition
Bolometric effect
Frequency response
Graphene
Microwave application
Nonlinear effect
Terahertz detection

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-8-22

Cite this

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title = "GR-FET application for high-frequency detection device",

abstract = "A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.",

keywords = "Ambient condition, Bolometric effect, Frequency response, Graphene, Microwave application, Nonlinear effect, Terahertz detection",

author = "Mahjoub, {Akram M.} and Alec Nicol and Takuto Abe and Takahiro Ouchi and Yuhei Iso and Michio Kida and Noboyuki Aoki and Katsuhiko Miyamoto and Takashige Omatsu and Bird, {Jonathan P.} and Ferry, {David K.} and Koji Ishibashi and Yuichi Ochiai",

note = "Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (19054016, 19204030, and 16656007) and by the JSPS Core-to-Core Program. This work was also in part supported by the Global COE Program at Chiba University (G-03, MEXT) and promoted by the international research and educational collaboration between Chiba University and SUNY Buffalo. Acknowledgement is extended to the National Science Foundation's Partnerships for the International Research & Education (NSF-PIRE) grant (OISE-0968405).",

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AU - Mahjoub, Akram M.

AU - Nicol, Alec

AU - Abe, Takuto

AU - Ouchi, Takahiro

AU - Iso, Yuhei

AU - Kida, Michio

AU - Aoki, Noboyuki

AU - Miyamoto, Katsuhiko

AU - Omatsu, Takashige

AU - Bird, Jonathan P.

AU - Ferry, David K.

AU - Ishibashi, Koji

AU - Ochiai, Yuichi

N1 - Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (19054016, 19204030, and 16656007) and by the JSPS Core-to-Core Program. This work was also in part supported by the Global COE Program at Chiba University (G-03, MEXT) and promoted by the international research and educational collaboration between Chiba University and SUNY Buffalo. Acknowledgement is extended to the National Science Foundation's Partnerships for the International Research & Education (NSF-PIRE) grant (OISE-0968405).

PY - 2013

Y1 - 2013

N2 - A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

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KW - Ambient condition

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KW - Microwave application

KW - Nonlinear effect

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GR-FET application for high-frequency detection device

Abstract

Keywords

ASJC Scopus subject areas

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