GR-FET application for high-frequency detection device

Akram M. Mahjoub, Alec Nicol, Takuto Abe, Takahiro Ouchi, Yuhei Iso, Michio Kida, Noboyuki Aoki, Katsuhiko Miyamoto, Takashige Omatsu, Jonathan P. Bird, David K. Ferry, Koji Ishibashi, Yuichi Ochiai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013

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Graphite
Field effect transistors
Graphene
graphene
field effect transistors
Microwaves
microwaves
wiring
sensors
Sensors
Electric wiring
insulation
Insulation
Photons
graphite
Heating
heating
Electrons
photons
electrons

Keywords

  • Ambient condition
  • Bolometric effect
  • Frequency response
  • Graphene
  • Microwave application
  • Nonlinear effect
  • Terahertz detection

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mahjoub, A. M., Nicol, A., Abe, T., Ouchi, T., Iso, Y., Kida, M., ... Ochiai, Y. (2013). GR-FET application for high-frequency detection device. Nanoscale Research Letters, 8(1), 1-8. https://doi.org/10.1186/1556-276X-8-22

GR-FET application for high-frequency detection device. / Mahjoub, Akram M.; Nicol, Alec; Abe, Takuto; Ouchi, Takahiro; Iso, Yuhei; Kida, Michio; Aoki, Noboyuki; Miyamoto, Katsuhiko; Omatsu, Takashige; Bird, Jonathan P.; Ferry, David K.; Ishibashi, Koji; Ochiai, Yuichi.

In: Nanoscale Research Letters, Vol. 8, No. 1, 2013, p. 1-8.

Research output: Contribution to journalArticle

Mahjoub, AM, Nicol, A, Abe, T, Ouchi, T, Iso, Y, Kida, M, Aoki, N, Miyamoto, K, Omatsu, T, Bird, JP, Ferry, DK, Ishibashi, K & Ochiai, Y 2013, 'GR-FET application for high-frequency detection device', Nanoscale Research Letters, vol. 8, no. 1, pp. 1-8. https://doi.org/10.1186/1556-276X-8-22
Mahjoub, Akram M. ; Nicol, Alec ; Abe, Takuto ; Ouchi, Takahiro ; Iso, Yuhei ; Kida, Michio ; Aoki, Noboyuki ; Miyamoto, Katsuhiko ; Omatsu, Takashige ; Bird, Jonathan P. ; Ferry, David K. ; Ishibashi, Koji ; Ochiai, Yuichi. / GR-FET application for high-frequency detection device. In: Nanoscale Research Letters. 2013 ; Vol. 8, No. 1. pp. 1-8.
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