Abstract

In this work, we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full-band, Cellular Monte Carlo (CMC) simulator to model the behavior of high-frequency devices. Replacing the quasi-static Poisson solver with a more exact electromagnetic (EM) solver provides a full-wave solution of Maxwell's equations, resulting in a more accurate model for determining the high-frequency response of microwave transistors.

Original languageEnglish (US)
Pages (from-to)415-418
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 2006

Fingerprint

Finite-difference Time-domain Method
Finite difference time domain method
Maxwell equations
Frequency Response
Maxwell's equations
Modeling
finite difference time domain method
Maxwell equation
frequency response
Microwave
simulators
Frequency response
Siméon Denis Poisson
Transistors
Simulator
transistors
Simulators
Microwaves
electromagnetism
microwaves

Keywords

  • CMC
  • FDTD
  • Full-wave
  • Global modeling
  • Monte Carlo
  • Particle-based simulator

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Global modeling of high frequency devices. / Ayubi-Moak, Jason S.; Goodnick, Stephen; Saraniti, Marco.

In: Journal of Computational Electronics, Vol. 5, No. 4, 12.2006, p. 415-418.

Research output: Contribution to journalArticle

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