Glide along non-basal slip planes in InGaN epilayers

S. Srinivasan, L. Geng, Fernando Ponce, Y. Narukawa, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2440-2443
Number of pages4
Edition7
DOIs
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period5/25/035/30/03

Fingerprint

Epilayers
Dislocations (crystals)
slip
Nucleation
Chemical activation
wurtzite
Plastics
plastics
nucleation
activation
Substrates
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Srinivasan, S., Geng, L., Ponce, F., Narukawa, Y., & Tanaka, S. (2003). Glide along non-basal slip planes in InGaN epilayers. In Physica Status Solidi C: Conferences (7 ed., pp. 2440-2443) https://doi.org/10.1002/pssc.200303421

Glide along non-basal slip planes in InGaN epilayers. / Srinivasan, S.; Geng, L.; Ponce, Fernando; Narukawa, Y.; Tanaka, S.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2440-2443.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Srinivasan, S, Geng, L, Ponce, F, Narukawa, Y & Tanaka, S 2003, Glide along non-basal slip planes in InGaN epilayers. in Physica Status Solidi C: Conferences. 7 edn, pp. 2440-2443, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 5/25/03. https://doi.org/10.1002/pssc.200303421
Srinivasan S, Geng L, Ponce F, Narukawa Y, Tanaka S. Glide along non-basal slip planes in InGaN epilayers. In Physica Status Solidi C: Conferences. 7 ed. 2003. p. 2440-2443 https://doi.org/10.1002/pssc.200303421
Srinivasan, S. ; Geng, L. ; Ponce, Fernando ; Narukawa, Y. ; Tanaka, S. / Glide along non-basal slip planes in InGaN epilayers. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2440-2443
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