Glide along non-basal slip planes in InGaN epilayers

S. Srinivasan; L. Geng; Fernando Ponce; Y. Narukawa; S. Tanaka

doi:10.1002/pssc.200303421

Glide along non-basal slip planes in InGaN epilayers

S. Srinivasan, L. Geng, Fernando Ponce, Y. Narukawa, S. Tanaka

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	2440-2443
Number of pages	4
Edition	7
DOIs	https://doi.org/10.1002/pssc.200303421
State	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003

Other

Other	5th International Conference on Nitride Semiconductors, ICNS 2003
Country/Territory	Japan
City	Nara
Period	5/25/03 → 5/30/03

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1002/pssc.200303421

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title = "Glide along non-basal slip planes in InGaN epilayers",

abstract = "We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.",

author = "S. Srinivasan and L. Geng and Fernando Ponce and Y. Narukawa and S. Tanaka",

year = "2003",

doi = "10.1002/pssc.200303421",

language = "English (US)",

pages = "2440--2443",

booktitle = "Physica Status Solidi C: Conferences",

edition = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

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TY - GEN

T1 - Glide along non-basal slip planes in InGaN epilayers

AU - Srinivasan, S.

AU - Geng, L.

AU - Ponce, Fernando

AU - Narukawa, Y.

AU - Tanaka, S.

PY - 2003

Y1 - 2003

N2 - We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.

AB - We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.

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U2 - 10.1002/pssc.200303421

DO - 10.1002/pssc.200303421

M3 - Conference contribution

AN - SCOPUS:84875095450

SP - 2440

EP - 2443

BT - Physica Status Solidi C: Conferences

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Glide along non-basal slip planes in InGaN epilayers

Abstract

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