Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

J. D. Gallagher, C. Xu, C. L. Senaratne, T. Aoki, P. M. Wallace, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

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Abstract

This paper reports initial the demonstration of prototype Ge1- x - ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1- x - ySixSny/p-Ge(Sn/Si)] using ultra low-temperature (T <300 °C) depositions of the highly reactive chemical sources Si4H10, Ge4H10, Ge3H8, and SnD4. The Sn content in the i-Ge1- x - ySixSny layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge1- ySny counterparts. These findings-combined with the enhanced thermal stability of Ge1- x - ySixSny relative to Ge1- ySny and the observation that ternary alloy disorder does not adversely affect the emission properties - indicate that Ge1- x - ySixSny may represent a practical target system for future generations of group-IV light sources on Si.

Original languageEnglish (US)
Article number135701
JournalJournal of Applied Physics
Volume118
Issue number13
DOIs
StatePublished - Oct 7 2015

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light emitting diodes
photonics
silicon
red shift
ternary alloys
cryogenic temperature
shoulders
electroluminescence
light sources
thermal stability
plots
electrical properties
prototypes
wafers
disorders
defects
geometry
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications. / Gallagher, J. D.; Xu, C.; Senaratne, C. L.; Aoki, T.; Wallace, P. M.; Kouvetakis, John; Menendez, Jose.

In: Journal of Applied Physics, Vol. 118, No. 13, 135701, 07.10.2015.

Research output: Contribution to journalArticle

Gallagher, J. D. ; Xu, C. ; Senaratne, C. L. ; Aoki, T. ; Wallace, P. M. ; Kouvetakis, John ; Menendez, Jose. / Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 13.
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abstract = "This paper reports initial the demonstration of prototype Ge1- x - ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1- x - ySixSny/p-Ge(Sn/Si)] using ultra low-temperature (T <300 °C) depositions of the highly reactive chemical sources Si4H10, Ge4H10, Ge3H8, and SnD4. The Sn content in the i-Ge1- x - ySixSny layer was varied from ∼3.5{\%} to 11{\%}, while the Si content was kept constant near 3{\%}. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5{\%} to 11{\%}. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge1- ySny counterparts. These findings-combined with the enhanced thermal stability of Ge1- x - ySixSny relative to Ge1- ySny and the observation that ternary alloy disorder does not adversely affect the emission properties - indicate that Ge1- x - ySixSny may represent a practical target system for future generations of group-IV light sources on Si.",
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