GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

G. Grzybowski, R. T. Beeler, L. Jiang, David Smith, Andrew Chizmeshya, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Thick ( > 500 nm) Ge1-ySny films with Sn concentrations as high as y = 0.09 were grown on Si substrates by ultrahigh-vacuum chemical vapor deposition using trigermane (Ge 3H8) and deuterated stannane (SnD4) as molecular sources. The trigermane precursor makes it possible to grow Ge at lower temperatures, and is therefore more compatible with the low temperatures required for high Sn incorporation. The properties of the films are investigated in detail using a variety of structural probes. They exhibit a sizable photoluminescence signal, with a direct band gap downshift relative to Ge that displays significant bowing in its compositional dependence.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages865-874
Number of pages10
Edition9
DOIs
StatePublished - Dec 1 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

ASJC Scopus subject areas

  • Engineering(all)

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