@inproceedings{a884c33b6984413c8c40f9f631356343,
title = "GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties",
abstract = "Thick ( > 500 nm) Ge1-ySny films with Sn concentrations as high as y = 0.09 were grown on Si substrates by ultrahigh-vacuum chemical vapor deposition using trigermane (Ge 3H8) and deuterated stannane (SnD4) as molecular sources. The trigermane precursor makes it possible to grow Ge at lower temperatures, and is therefore more compatible with the low temperatures required for high Sn incorporation. The properties of the films are investigated in detail using a variety of structural probes. They exhibit a sizable photoluminescence signal, with a direct band gap downshift relative to Ge that displays significant bowing in its compositional dependence.",
author = "G. Grzybowski and Beeler, {R. T.} and L. Jiang and David Smith and Andrew Chizmeshya and John Kouvetakis and Jose Menendez",
year = "2013",
doi = "10.1149/05009.0865ecst",
language = "English (US)",
isbn = "9781607683575",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "865--874",
booktitle = "SiGe, Ge, and Related Compounds 5",
edition = "9",
note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}