Ge/Si(100) Island and Wetting Layer Composition

Yangting Zhang, Jeffery Drucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Etching water soluble Ge-oxides was used to investigate Si interdiffusion into epitaxial Ge/Si(100) samples. The Ge coverage, θ Ge, was measured using Rutherford backscattering spectrometry (RBS) before and after water etching of samples grown at substrate temperatures between 400°C and 650°C. θ Ge was correlated with sample morphology determined using atomic force microscopy (AFM). The local Ge concentration was qualitatively assessed using energy dispersive x-ray (EDX) analysis. For samples grown at T=400°C, water completely dissolves the islands and no Ge is detected by RBS. For samples grown at T=600 and 650°C, AFM detects no change in the surface morphology and RBS indicates that 650°C decreases by about 3 monolayers (ML). These results suggest that for growth at T=400°C, both the islands and wetting layer are relatively pure Ge while for growth at T≥600°C, the wetting layer is Ge rich compare to the SiGe alloy islands, EDX confirms this conclusion detecting no Ge signal between islands for etched samples grown at T≥600°C. Our results suggest that for growth at T≥600°C, Si interdiffusion into islands is through the region underneath the islands instead of from the wetting layer.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.J. Aziz, N.C. Bartelt, I. Berbezier, J.B. Hannon, S.J. Hearne
Pages233-238
Number of pages6
Volume749
StatePublished - 2002
EventMorphological and Compositional Evolution of Thin Films - Boston, MA, United States
Duration: Dec 2 2002Dec 5 2002

Other

OtherMorphological and Compositional Evolution of Thin Films
CountryUnited States
CityBoston, MA
Period12/2/0212/5/02

Fingerprint

Rutherford backscattering spectroscopy
Spectrometry
Wetting
Water
Etching
Atomic force microscopy
Chemical analysis
X rays
Oxides
Surface morphology
Monolayers
Substrates
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zhang, Y., & Drucker, J. (2002). Ge/Si(100) Island and Wetting Layer Composition. In M. J. Aziz, N. C. Bartelt, I. Berbezier, J. B. Hannon, & S. J. Hearne (Eds.), Materials Research Society Symposium - Proceedings (Vol. 749, pp. 233-238)

Ge/Si(100) Island and Wetting Layer Composition. / Zhang, Yangting; Drucker, Jeffery.

Materials Research Society Symposium - Proceedings. ed. / M.J. Aziz; N.C. Bartelt; I. Berbezier; J.B. Hannon; S.J. Hearne. Vol. 749 2002. p. 233-238.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, Y & Drucker, J 2002, Ge/Si(100) Island and Wetting Layer Composition. in MJ Aziz, NC Bartelt, I Berbezier, JB Hannon & SJ Hearne (eds), Materials Research Society Symposium - Proceedings. vol. 749, pp. 233-238, Morphological and Compositional Evolution of Thin Films, Boston, MA, United States, 12/2/02.
Zhang Y, Drucker J. Ge/Si(100) Island and Wetting Layer Composition. In Aziz MJ, Bartelt NC, Berbezier I, Hannon JB, Hearne SJ, editors, Materials Research Society Symposium - Proceedings. Vol. 749. 2002. p. 233-238
Zhang, Yangting ; Drucker, Jeffery. / Ge/Si(100) Island and Wetting Layer Composition. Materials Research Society Symposium - Proceedings. editor / M.J. Aziz ; N.C. Bartelt ; I. Berbezier ; J.B. Hannon ; S.J. Hearne. Vol. 749 2002. pp. 233-238
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