Germanium p-i-n photodiode on silicon for integrated photonic applications

Jay Mathews, Radek Roucka, Change Weng, John Tolle, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, efforts in this area have focused on developing detectors from pure-Ge grown epitaxially on Si substrates. Much effort has been spent on achieving growth of high quality, relaxed Ge films for device structures, but low temperature growth and processing compatible with complementary-metal-oxide-semiconductor (CMOS) technology has yet to be achieved. In this paper, we report on p-i-n heterostructure photodiodes fabricated from Ge films grown directly on Si substrates using a low temperature chemical vapor deposition (CVD) process. The heterostructures were grown on arsenic-doped (n-type) Si(100) with resistivity 0.003 Ω-cm. A 350nm thick layer of intrinsic Ge was deposited first as the active region, followed by 100nm of boron-doped (p-type) Ge. Ohmic contacts were formed by evaporation of Cr and Au. The diodes were characterized with respect to their dark currents and responsivities in the near-IR. For a 60-μm-diameter device at room temperature, the dark current densities were on the order of 10-2 A/cm2 and 103 A/cm 2 at -1V and 1V, respectively, the "turn-on" voltage was found to be 0.26 V, and the ideality factor n was found to be 1.2. The external quantum efficiency of the devices was measured at room temperature over the range 1-1.8 μm. The responsivities at 1.3 and 1.55 μm were found to be 0.26 and 0.11, respectively.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7606
DOIs
StatePublished - 2010
EventSilicon Photonics V - San Francisco, CA, United States
Duration: Jan 24 2010Jan 27 2010

Other

OtherSilicon Photonics V
CountryUnited States
CitySan Francisco, CA
Period1/24/101/27/10

Fingerprint

Germanium
Photodiode
Silicon
Photodiodes
Photonics
photodiodes
germanium
Responsivity
Dark Current
Heterostructures
Dark currents
photonics
dark current
Heterojunctions
silicon
Substrate
Silicon Photonics
Infrared Detectors
Boron
Infrared detectors

Keywords

  • Detectors
  • Diode
  • Germanium
  • Heterostructure
  • Integration
  • Optoelectronics
  • Photonics
  • Silicon

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mathews, J., Roucka, R., Weng, C., Tolle, J., Menendez, J., & Kouvetakis, J. (2010). Germanium p-i-n photodiode on silicon for integrated photonic applications. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7606). [76061L] https://doi.org/10.1117/12.855384

Germanium p-i-n photodiode on silicon for integrated photonic applications. / Mathews, Jay; Roucka, Radek; Weng, Change; Tolle, John; Menendez, Jose; Kouvetakis, John.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7606 2010. 76061L.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mathews, J, Roucka, R, Weng, C, Tolle, J, Menendez, J & Kouvetakis, J 2010, Germanium p-i-n photodiode on silicon for integrated photonic applications. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7606, 76061L, Silicon Photonics V, San Francisco, CA, United States, 1/24/10. https://doi.org/10.1117/12.855384
Mathews J, Roucka R, Weng C, Tolle J, Menendez J, Kouvetakis J. Germanium p-i-n photodiode on silicon for integrated photonic applications. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7606. 2010. 76061L https://doi.org/10.1117/12.855384
Mathews, Jay ; Roucka, Radek ; Weng, Change ; Tolle, John ; Menendez, Jose ; Kouvetakis, John. / Germanium p-i-n photodiode on silicon for integrated photonic applications. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7606 2010.
@inproceedings{556b69e962334fcaa04d9c803276c868,
title = "Germanium p-i-n photodiode on silicon for integrated photonic applications",
abstract = "The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, efforts in this area have focused on developing detectors from pure-Ge grown epitaxially on Si substrates. Much effort has been spent on achieving growth of high quality, relaxed Ge films for device structures, but low temperature growth and processing compatible with complementary-metal-oxide-semiconductor (CMOS) technology has yet to be achieved. In this paper, we report on p-i-n heterostructure photodiodes fabricated from Ge films grown directly on Si substrates using a low temperature chemical vapor deposition (CVD) process. The heterostructures were grown on arsenic-doped (n-type) Si(100) with resistivity 0.003 Ω-cm. A 350nm thick layer of intrinsic Ge was deposited first as the active region, followed by 100nm of boron-doped (p-type) Ge. Ohmic contacts were formed by evaporation of Cr and Au. The diodes were characterized with respect to their dark currents and responsivities in the near-IR. For a 60-μm-diameter device at room temperature, the dark current densities were on the order of 10-2 A/cm2 and 103 A/cm 2 at -1V and 1V, respectively, the {"}turn-on{"} voltage was found to be 0.26 V, and the ideality factor n was found to be 1.2. The external quantum efficiency of the devices was measured at room temperature over the range 1-1.8 μm. The responsivities at 1.3 and 1.55 μm were found to be 0.26 and 0.11, respectively.",
keywords = "Detectors, Diode, Germanium, Heterostructure, Integration, Optoelectronics, Photonics, Silicon",
author = "Jay Mathews and Radek Roucka and Change Weng and John Tolle and Jose Menendez and John Kouvetakis",
year = "2010",
doi = "10.1117/12.855384",
language = "English (US)",
isbn = "9780819480026",
volume = "7606",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Germanium p-i-n photodiode on silicon for integrated photonic applications

AU - Mathews, Jay

AU - Roucka, Radek

AU - Weng, Change

AU - Tolle, John

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2010

Y1 - 2010

N2 - The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, efforts in this area have focused on developing detectors from pure-Ge grown epitaxially on Si substrates. Much effort has been spent on achieving growth of high quality, relaxed Ge films for device structures, but low temperature growth and processing compatible with complementary-metal-oxide-semiconductor (CMOS) technology has yet to be achieved. In this paper, we report on p-i-n heterostructure photodiodes fabricated from Ge films grown directly on Si substrates using a low temperature chemical vapor deposition (CVD) process. The heterostructures were grown on arsenic-doped (n-type) Si(100) with resistivity 0.003 Ω-cm. A 350nm thick layer of intrinsic Ge was deposited first as the active region, followed by 100nm of boron-doped (p-type) Ge. Ohmic contacts were formed by evaporation of Cr and Au. The diodes were characterized with respect to their dark currents and responsivities in the near-IR. For a 60-μm-diameter device at room temperature, the dark current densities were on the order of 10-2 A/cm2 and 103 A/cm 2 at -1V and 1V, respectively, the "turn-on" voltage was found to be 0.26 V, and the ideality factor n was found to be 1.2. The external quantum efficiency of the devices was measured at room temperature over the range 1-1.8 μm. The responsivities at 1.3 and 1.55 μm were found to be 0.26 and 0.11, respectively.

AB - The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, efforts in this area have focused on developing detectors from pure-Ge grown epitaxially on Si substrates. Much effort has been spent on achieving growth of high quality, relaxed Ge films for device structures, but low temperature growth and processing compatible with complementary-metal-oxide-semiconductor (CMOS) technology has yet to be achieved. In this paper, we report on p-i-n heterostructure photodiodes fabricated from Ge films grown directly on Si substrates using a low temperature chemical vapor deposition (CVD) process. The heterostructures were grown on arsenic-doped (n-type) Si(100) with resistivity 0.003 Ω-cm. A 350nm thick layer of intrinsic Ge was deposited first as the active region, followed by 100nm of boron-doped (p-type) Ge. Ohmic contacts were formed by evaporation of Cr and Au. The diodes were characterized with respect to their dark currents and responsivities in the near-IR. For a 60-μm-diameter device at room temperature, the dark current densities were on the order of 10-2 A/cm2 and 103 A/cm 2 at -1V and 1V, respectively, the "turn-on" voltage was found to be 0.26 V, and the ideality factor n was found to be 1.2. The external quantum efficiency of the devices was measured at room temperature over the range 1-1.8 μm. The responsivities at 1.3 and 1.55 μm were found to be 0.26 and 0.11, respectively.

KW - Detectors

KW - Diode

KW - Germanium

KW - Heterostructure

KW - Integration

KW - Optoelectronics

KW - Photonics

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=77951696962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951696962&partnerID=8YFLogxK

U2 - 10.1117/12.855384

DO - 10.1117/12.855384

M3 - Conference contribution

AN - SCOPUS:77951696962

SN - 9780819480026

VL - 7606

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -