Germanium and silicon nanocrystal thin-film field-effect transistors from solution

Zachary C. Holman, Chin Yi Liu, Uwe R. Kortshagen

Research output: Contribution to journalArticle

105 Scopus citations

Abstract

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

Original languageEnglish (US)
Pages (from-to)2661-2666
Number of pages6
JournalNano Letters
Volume10
Issue number7
DOIs
StatePublished - Jul 14 2010
Externally publishedYes

Keywords

  • FET
  • Germanium
  • Nanocrystal
  • Silicon
  • Thin film
  • Transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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