Germanium and silicon nanocrystal thin-film field-effect transistors from solution

Zachary Holman, Chin Yi Liu, Uwe R. Kortshagen

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

Original languageEnglish (US)
Pages (from-to)2661-2666
Number of pages6
JournalNano Letters
Volume10
Issue number7
DOIs
StatePublished - Jul 14 2010
Externally publishedYes

Fingerprint

Germanium
Silicon
Thin film transistors
Field effect transistors
Nanocrystals
germanium
nanocrystals
field effect transistors
silicon
thin films
Semiconductor materials
Thin film devices
Hole mobility
Electron mobility
hole mobility
electron mobility
emerging
Casting
Annealing
Plasmas

Keywords

  • FET
  • Germanium
  • Nanocrystal
  • Silicon
  • Thin film
  • Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Germanium and silicon nanocrystal thin-film field-effect transistors from solution. / Holman, Zachary; Liu, Chin Yi; Kortshagen, Uwe R.

In: Nano Letters, Vol. 10, No. 7, 14.07.2010, p. 2661-2666.

Research output: Contribution to journalArticle

Holman, Zachary ; Liu, Chin Yi ; Kortshagen, Uwe R. / Germanium and silicon nanocrystal thin-film field-effect transistors from solution. In: Nano Letters. 2010 ; Vol. 10, No. 7. pp. 2661-2666.
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