Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures

R. Liu, J. Mei, S. Srinivasan, Fernando Ponce, H. Omiya, Y. Narukawa, T. Mukai

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

The authors have observed that for Inx Ga1-x N epitaxial layers grown on bulk GaN substrates exhibit slip on the basal plane, when in the presence of free surfaces that intercept the heterointerface and for indium compositions x0.07. This leads to almost complete relaxation of the local misfit strain by generation of radial-shape dislocation half loops. For x0.17, generation of straight misfit dislocations by glide on the secondary 〈11 2- 3〉 {11 2- 2} slip system is observed, in addition to the radial-shape half loops at surface pits. These two mechanisms act independently with no observed interaction between them, leading to the conclusion that slip on the basal plane occurs first during the growth process. The secondary slip system is activated later and involves a significantly higher critical stress energy.

Original languageEnglish (US)
Article number201911
JournalApplied Physics Letters
Volume89
Issue number20
DOIs
StatePublished - Nov 23 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures'. Together they form a unique fingerprint.

Cite this