Abstract

AlGaN/GaN HEMTs have demonstrated outstanding performance in terms of high-power and high frequency operation. However, reliability concerns constitute one of the limiting factors preventing the fully exploitation of this technology. In particular, hot electron generation has been consistently reported as one of the main mechanisms for device degradation, since high energy carriers can create electrically active traps that reduce performance [1]. Many studies of hot electron concentration have been performed on DC operation only, and those done in RF do not provide an accurate, quantitative carrier energy distribution [2]. In this work, we present a comparative study of the hot carrier generation under RF operation in Class A and Class AB power amplifier (PA) topologies. This is done in terms of the accurate simulation of the electron energy distribution function (EDF) under RF conditions, by means of our full band cellular Monte Carlo device simulator (CMC) [3], self-consistently coupled to a harmonic balance (HB) circuit solver based on the load line technique [4]. Within this framework it can be simultaneously captured the highly-non-linear, out of equilibrium carrier dynamics of the device under large signal operation, along with the full complexity of the external circuitry necessary for adequate power amplifier performance.

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
DOIs
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Other

Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period6/25/176/28/17

Fingerprint

Hot electrons
High electron mobility transistors
Power amplifiers
Hot carriers
Distribution functions
Simulators
Topology
Degradation
Electrons
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Latorre-Rey, A. D., Albrecht, J. D., & Saraniti, M. (2017). Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs. In 75th Annual Device Research Conference, DRC 2017 [7999436] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999436

Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs. / Latorre-Rey, Alvaro D.; Albrecht, John D.; Saraniti, Marco.

75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999436.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Latorre-Rey, AD, Albrecht, JD & Saraniti, M 2017, Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs. in 75th Annual Device Research Conference, DRC 2017., 7999436, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 6/25/17. https://doi.org/10.1109/DRC.2017.7999436
Latorre-Rey AD, Albrecht JD, Saraniti M. Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs. In 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7999436 https://doi.org/10.1109/DRC.2017.7999436
Latorre-Rey, Alvaro D. ; Albrecht, John D. ; Saraniti, Marco. / Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs. 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017.
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