GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE LT AN BR 100 RT AN BR Si WAFERS.

E. M. Murray, M. P. Scott, S. Hahn, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsW.Murray Bullis, L.C. Kimerling
Place of PublicationPennington, NJ, USA
PublisherElectrochemical Soc Inc
Pages220-228
Number of pages9
Volume83-9
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering

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