GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE LT AN BR 100 RT AN BR Si WAFERS.

E. M. Murray, M. P. Scott, S. Hahn, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsW.Murray Bullis, L.C. Kimerling
Place of PublicationPennington, NJ, USA
PublisherElectrochemical Soc Inc
Pages220-228
Number of pages9
Volume83-9
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Murray, E. M., Scott, M. P., Hahn, S., & Ponce, F. (1983). GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE LT AN BR 100 RT AN BR Si WAFERS. In W. M. Bullis, & L. C. Kimerling (Eds.), Proceedings - The Electrochemical Society (Vol. 83-9, pp. 220-228). Electrochemical Soc Inc.