A study was performed on the properties of very small semiconductor devices. The central feature of transport in very-small devices was that the device microdynamics could not be treated in isolation. The general treatment of expanding the density matrix for the entire system was outlined in a manner which allowed one to pull out the critical dynamics of the buried system of interest.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2003|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering