Generalized interfaces

D. K. Ferry, R. A. Akis, J. P. Bird, M. Elhassan, I. Knezevic, C. Prasad, A. Shailos

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A study was performed on the properties of very small semiconductor devices. The central feature of transport in very-small devices was that the device microdynamics could not be treated in isolation. The general treatment of expanding the density matrix for the entire system was outlined in a manner which allowed one to pull out the critical dynamics of the buried system of interest.

Original languageEnglish (US)
Pages (from-to)1891-1895
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 2003

Fingerprint

Semiconductor devices
semiconductor devices
isolation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Ferry, D. K., Akis, R. A., Bird, J. P., Elhassan, M., Knezevic, I., Prasad, C., & Shailos, A. (2003). Generalized interfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1891-1895.

Generalized interfaces. / Ferry, D. K.; Akis, R. A.; Bird, J. P.; Elhassan, M.; Knezevic, I.; Prasad, C.; Shailos, A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1891-1895.

Research output: Contribution to journalArticle

Ferry, DK, Akis, RA, Bird, JP, Elhassan, M, Knezevic, I, Prasad, C & Shailos, A 2003, 'Generalized interfaces', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1891-1895.
Ferry DK, Akis RA, Bird JP, Elhassan M, Knezevic I, Prasad C et al. Generalized interfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 Jul;21(4):1891-1895.
Ferry, D. K. ; Akis, R. A. ; Bird, J. P. ; Elhassan, M. ; Knezevic, I. ; Prasad, C. ; Shailos, A. / Generalized interfaces. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 4. pp. 1891-1895.
@article{e110cb4467ca4fd3adad51f4ddd59fff,
title = "Generalized interfaces",
abstract = "A study was performed on the properties of very small semiconductor devices. The central feature of transport in very-small devices was that the device microdynamics could not be treated in isolation. The general treatment of expanding the density matrix for the entire system was outlined in a manner which allowed one to pull out the critical dynamics of the buried system of interest.",
author = "Ferry, {D. K.} and Akis, {R. A.} and Bird, {J. P.} and M. Elhassan and I. Knezevic and C. Prasad and A. Shailos",
year = "2003",
month = "7",
language = "English (US)",
volume = "21",
pages = "1891--1895",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Generalized interfaces

AU - Ferry, D. K.

AU - Akis, R. A.

AU - Bird, J. P.

AU - Elhassan, M.

AU - Knezevic, I.

AU - Prasad, C.

AU - Shailos, A.

PY - 2003/7

Y1 - 2003/7

N2 - A study was performed on the properties of very small semiconductor devices. The central feature of transport in very-small devices was that the device microdynamics could not be treated in isolation. The general treatment of expanding the density matrix for the entire system was outlined in a manner which allowed one to pull out the critical dynamics of the buried system of interest.

AB - A study was performed on the properties of very small semiconductor devices. The central feature of transport in very-small devices was that the device microdynamics could not be treated in isolation. The general treatment of expanding the density matrix for the entire system was outlined in a manner which allowed one to pull out the critical dynamics of the buried system of interest.

UR - http://www.scopus.com/inward/record.url?scp=0141681088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141681088&partnerID=8YFLogxK

M3 - Article

VL - 21

SP - 1891

EP - 1895

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -