Ge1-y Sny photoconductor structures at 1.55 μm

From advanced materials to prototype devices

R. Roucka, J. Xie, John Kouvetakis, J. Mathews, V. D'Costa, Jose Menendez, J. Tolle, S. Q. Yu

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Prototype detector structures were fabricated on Si substrates using Ge1-y Sny as active material for the first time. This alloy system covers the entire near-IR telecommunication spectrum and grows at a low temperature of 350 °C, compatible with complementary metal-oxide-semiconductor (CMOS) Si technology. Processing protocols were developed for photolithography-based patterning and subsequent etching, CMOS compatible metallization, and for the formation of low-resistivity Ohmic contacts. A first generation of devices based on as-grown Ge1-y Sny layers was followed by a second generation incorporating ex situ rapid thermal annealing for defect reduction, as well as additional growth and processing improvements, leading to enhanced mobilities and simultaneous reduction in intrinsic carrier concentrations. While both device generations show a significant photoconductive response at 1.55 μm, the thicker second-generation samples yield improved performance due to better confinement of deleterious defects near the interface, which increases the optically active fraction of the film.

Original languageEnglish (US)
Pages (from-to)1952-1959
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number6
DOIs
StatePublished - 2008

Fingerprint

Photoconducting materials
photoconductors
prototypes
Defects
Ohmic contacts
Rapid thermal annealing
Photolithography
Processing
Metallizing
Metals
Telecommunication
Carrier concentration
Etching
CMOS
Detectors
defects
Substrates
photolithography
telecommunication
electric contacts

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ge1-y Sny photoconductor structures at 1.55 μm : From advanced materials to prototype devices. / Roucka, R.; Xie, J.; Kouvetakis, John; Mathews, J.; D'Costa, V.; Menendez, Jose; Tolle, J.; Yu, S. Q.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6, 2008, p. 1952-1959.

Research output: Contribution to journalArticle

@article{0e9de2debf754bf790ce52f66db3ec30,
title = "Ge1-y Sny photoconductor structures at 1.55 μm: From advanced materials to prototype devices",
abstract = "Prototype detector structures were fabricated on Si substrates using Ge1-y Sny as active material for the first time. This alloy system covers the entire near-IR telecommunication spectrum and grows at a low temperature of 350 °C, compatible with complementary metal-oxide-semiconductor (CMOS) Si technology. Processing protocols were developed for photolithography-based patterning and subsequent etching, CMOS compatible metallization, and for the formation of low-resistivity Ohmic contacts. A first generation of devices based on as-grown Ge1-y Sny layers was followed by a second generation incorporating ex situ rapid thermal annealing for defect reduction, as well as additional growth and processing improvements, leading to enhanced mobilities and simultaneous reduction in intrinsic carrier concentrations. While both device generations show a significant photoconductive response at 1.55 μm, the thicker second-generation samples yield improved performance due to better confinement of deleterious defects near the interface, which increases the optically active fraction of the film.",
author = "R. Roucka and J. Xie and John Kouvetakis and J. Mathews and V. D'Costa and Jose Menendez and J. Tolle and Yu, {S. Q.}",
year = "2008",
doi = "10.1116/1.3021024",
language = "English (US)",
volume = "26",
pages = "1952--1959",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Ge1-y Sny photoconductor structures at 1.55 μm

T2 - From advanced materials to prototype devices

AU - Roucka, R.

AU - Xie, J.

AU - Kouvetakis, John

AU - Mathews, J.

AU - D'Costa, V.

AU - Menendez, Jose

AU - Tolle, J.

AU - Yu, S. Q.

PY - 2008

Y1 - 2008

N2 - Prototype detector structures were fabricated on Si substrates using Ge1-y Sny as active material for the first time. This alloy system covers the entire near-IR telecommunication spectrum and grows at a low temperature of 350 °C, compatible with complementary metal-oxide-semiconductor (CMOS) Si technology. Processing protocols were developed for photolithography-based patterning and subsequent etching, CMOS compatible metallization, and for the formation of low-resistivity Ohmic contacts. A first generation of devices based on as-grown Ge1-y Sny layers was followed by a second generation incorporating ex situ rapid thermal annealing for defect reduction, as well as additional growth and processing improvements, leading to enhanced mobilities and simultaneous reduction in intrinsic carrier concentrations. While both device generations show a significant photoconductive response at 1.55 μm, the thicker second-generation samples yield improved performance due to better confinement of deleterious defects near the interface, which increases the optically active fraction of the film.

AB - Prototype detector structures were fabricated on Si substrates using Ge1-y Sny as active material for the first time. This alloy system covers the entire near-IR telecommunication spectrum and grows at a low temperature of 350 °C, compatible with complementary metal-oxide-semiconductor (CMOS) Si technology. Processing protocols were developed for photolithography-based patterning and subsequent etching, CMOS compatible metallization, and for the formation of low-resistivity Ohmic contacts. A first generation of devices based on as-grown Ge1-y Sny layers was followed by a second generation incorporating ex situ rapid thermal annealing for defect reduction, as well as additional growth and processing improvements, leading to enhanced mobilities and simultaneous reduction in intrinsic carrier concentrations. While both device generations show a significant photoconductive response at 1.55 μm, the thicker second-generation samples yield improved performance due to better confinement of deleterious defects near the interface, which increases the optically active fraction of the film.

UR - http://www.scopus.com/inward/record.url?scp=57249103709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57249103709&partnerID=8YFLogxK

U2 - 10.1116/1.3021024

DO - 10.1116/1.3021024

M3 - Article

VL - 26

SP - 1952

EP - 1959

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -