Ge-Sn semiconductors for band-gap and lattice engineering

M. Bauer, J. Taraci, J. Tolle, Andrew Chizmeshya, S. Zollner, David Smith, Jose Menendez, Changwu Hu, John Kouvetakis

Research output: Contribution to journalArticle

202 Citations (Scopus)

Abstract

We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

Original languageEnglish (US)
Pages (from-to)2992-2994
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
StatePublished - Oct 14 2002

Fingerprint

engineering
secondary ion mass spectrometry
hydrides
ellipsometry
deuterium
crystallinity
backscattering
x ray diffraction
thermal stability
Raman spectroscopy
diamonds
infrared spectroscopy
routes
density functional theory
optical properties
transmission electron microscopy
high resolution
curves
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ge-Sn semiconductors for band-gap and lattice engineering. / Bauer, M.; Taraci, J.; Tolle, J.; Chizmeshya, Andrew; Zollner, S.; Smith, David; Menendez, Jose; Hu, Changwu; Kouvetakis, John.

In: Applied Physics Letters, Vol. 81, No. 16, 14.10.2002, p. 2992-2994.

Research output: Contribution to journalArticle

Bauer, M. ; Taraci, J. ; Tolle, J. ; Chizmeshya, Andrew ; Zollner, S. ; Smith, David ; Menendez, Jose ; Hu, Changwu ; Kouvetakis, John. / Ge-Sn semiconductors for band-gap and lattice engineering. In: Applied Physics Letters. 2002 ; Vol. 81, No. 16. pp. 2992-2994.
@article{5e44eb591d6840328658b1d750896e69,
title = "Ge-Sn semiconductors for band-gap and lattice engineering",
abstract = "We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.",
author = "M. Bauer and J. Taraci and J. Tolle and Andrew Chizmeshya and S. Zollner and David Smith and Jose Menendez and Changwu Hu and John Kouvetakis",
year = "2002",
month = "10",
day = "14",
doi = "10.1063/1.1515133",
language = "English (US)",
volume = "81",
pages = "2992--2994",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Ge-Sn semiconductors for band-gap and lattice engineering

AU - Bauer, M.

AU - Taraci, J.

AU - Tolle, J.

AU - Chizmeshya, Andrew

AU - Zollner, S.

AU - Smith, David

AU - Menendez, Jose

AU - Hu, Changwu

AU - Kouvetakis, John

PY - 2002/10/14

Y1 - 2002/10/14

N2 - We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

AB - We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

UR - http://www.scopus.com/inward/record.url?scp=79956008207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956008207&partnerID=8YFLogxK

U2 - 10.1063/1.1515133

DO - 10.1063/1.1515133

M3 - Article

VL - 81

SP - 2992

EP - 2994

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -