Ge-Sn semiconductors for band-gap and lattice engineering

M. Bauer; J. Taraci; J. Tolle; Andrew Chizmeshya; S. Zollner; David Smith; Jose Menendez; Changwu Hu; John Kouvetakis

doi:10.1063/1.1515133

Ge-Sn semiconductors for band-gap and lattice engineering

M. Bauer, J. Taraci, J. Tolle, Andrew Chizmeshya, S. Zollner, David Smith, Jose Menendez, Changwu Hu, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

251 Scopus citations

Abstract

We describe a class of Si-based semiconductors in the Ge _1-xSn_x system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge_1-xSn_x alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

Original language	English (US)
Pages (from-to)	2992-2994
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	16
DOIs	https://doi.org/10.1063/1.1515133
State	Published - Oct 14 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1515133

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abstract = "We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.",

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T1 - Ge-Sn semiconductors for band-gap and lattice engineering

AU - Bauer, M.

AU - Taraci, J.

AU - Tolle, J.

AU - Chizmeshya, Andrew

AU - Zollner, S.

AU - Smith, David

AU - Menendez, Jose

AU - Hu, Changwu

AU - Kouvetakis, John

PY - 2002/10/14

Y1 - 2002/10/14

N2 - We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

AB - We describe a class of Si-based semiconductors in the Ge 1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.

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Ge-Sn semiconductors for band-gap and lattice engineering

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