Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor

Roger Loo, Philippe Meunier-Beillard, Didier Dentel, Michael Goryll, Danielle Vanhaeren, Lili Vescan, Hugo Bender, Matty Caymax, Wilfried Vandervorst

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Si based nanostructures such as Ge or Si 1-xGe x dots embedded in Si receive a lot of attention. This interest is driven by the reduction of device sizes as well as by their possible use in opto-electronic applications, as a possible solution to improve the radiative light emission. In this paper we give a detailed overview of the growth kinetics as observed for Ge growth in a standard production oriented chemical vapor deposition system. The island morphology and density are controlled by varying the growth conditions or by applying a thermal anneal after the island growth. Island densities up to 2.3×10 10 cm -2 have been obtained for depositions at 650°C. With increasing deposition time, the usual change-over from monomodal to bimodal island distribution is pointed out and this change-over depends on the critical island diameter, which decreases with decreasing growth temperature. Applying a thermal budget after the island growth initiates Ge surface diffusion and Si diffusion from the substrate through the islands. This results in an enhancement of the island diameter and height, and also in a reduction of island density. Furthermore, depending on the island distribution after Ge deposition, a transition from pyramid to dome or visa versa is observed after the in-situ anneal. Optical device structures require a Si cap layer. However, Si capping at 700°C, leads to a nearly total dissolution of small islands and a truncation of bigger dome-shaped islands. This can be prevented by reducing the deposition temperature and by changing the Si gas source. Clear island luminescence, is observed up to 200 K and lies in the spectral range of 1.35-1.50μm, which is interesting from the point of view of applications. In particular, this shows the potential of this material system for opto-electronic device applications. In spite of the fact that the observed PL intensity is comparable to the best reported values, we could further enhance it by a thermal treatment in a H 2 plasma.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM Stutzmann, J Boyce, J D Cohen, R Collins, J Hanna
Volume664
StatePublished - 2001
Externally publishedYes
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Other

OtherAmorphous and Heterogeneous Silicon Based Films 2001
CountryUnited States
CitySan Francisco, CA
Period4/16/014/20/01

Fingerprint

Chemical vapor deposition
Domes
Surface diffusion
Growth kinetics
Light emission
Growth temperature
Optical devices
Optoelectronic devices
Luminescence
Nanostructures
Dissolution
Gases
Heat treatment
Plasmas
Substrates
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Loo, R., Meunier-Beillard, P., Dentel, D., Goryll, M., Vanhaeren, D., Vescan, L., ... Vandervorst, W. (2001). Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor. In M. Stutzmann, J. Boyce, J. D. Cohen, R. Collins, & J. Hanna (Eds.), Materials Research Society Symposium - Proceedings (Vol. 664)

Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor. / Loo, Roger; Meunier-Beillard, Philippe; Dentel, Didier; Goryll, Michael; Vanhaeren, Danielle; Vescan, Lili; Bender, Hugo; Caymax, Matty; Vandervorst, Wilfried.

Materials Research Society Symposium - Proceedings. ed. / M Stutzmann; J Boyce; J D Cohen; R Collins; J Hanna. Vol. 664 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Loo, R, Meunier-Beillard, P, Dentel, D, Goryll, M, Vanhaeren, D, Vescan, L, Bender, H, Caymax, M & Vandervorst, W 2001, Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor. in M Stutzmann, J Boyce, JD Cohen, R Collins & J Hanna (eds), Materials Research Society Symposium - Proceedings. vol. 664, Amorphous and Heterogeneous Silicon Based Films 2001, San Francisco, CA, United States, 4/16/01.
Loo R, Meunier-Beillard P, Dentel D, Goryll M, Vanhaeren D, Vescan L et al. Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor. In Stutzmann M, Boyce J, Cohen JD, Collins R, Hanna J, editors, Materials Research Society Symposium - Proceedings. Vol. 664. 2001
Loo, Roger ; Meunier-Beillard, Philippe ; Dentel, Didier ; Goryll, Michael ; Vanhaeren, Danielle ; Vescan, Lili ; Bender, Hugo ; Caymax, Matty ; Vandervorst, Wilfried. / Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor. Materials Research Society Symposium - Proceedings. editor / M Stutzmann ; J Boyce ; J D Cohen ; R Collins ; J Hanna. Vol. 664 2001.
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AU - Goryll, Michael

AU - Vanhaeren, Danielle

AU - Vescan, Lili

AU - Bender, Hugo

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AU - Vandervorst, Wilfried

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N2 - Si based nanostructures such as Ge or Si 1-xGe x dots embedded in Si receive a lot of attention. This interest is driven by the reduction of device sizes as well as by their possible use in opto-electronic applications, as a possible solution to improve the radiative light emission. In this paper we give a detailed overview of the growth kinetics as observed for Ge growth in a standard production oriented chemical vapor deposition system. The island morphology and density are controlled by varying the growth conditions or by applying a thermal anneal after the island growth. Island densities up to 2.3×10 10 cm -2 have been obtained for depositions at 650°C. With increasing deposition time, the usual change-over from monomodal to bimodal island distribution is pointed out and this change-over depends on the critical island diameter, which decreases with decreasing growth temperature. Applying a thermal budget after the island growth initiates Ge surface diffusion and Si diffusion from the substrate through the islands. This results in an enhancement of the island diameter and height, and also in a reduction of island density. Furthermore, depending on the island distribution after Ge deposition, a transition from pyramid to dome or visa versa is observed after the in-situ anneal. Optical device structures require a Si cap layer. However, Si capping at 700°C, leads to a nearly total dissolution of small islands and a truncation of bigger dome-shaped islands. This can be prevented by reducing the deposition temperature and by changing the Si gas source. Clear island luminescence, is observed up to 200 K and lies in the spectral range of 1.35-1.50μm, which is interesting from the point of view of applications. In particular, this shows the potential of this material system for opto-electronic device applications. In spite of the fact that the observed PL intensity is comparable to the best reported values, we could further enhance it by a thermal treatment in a H 2 plasma.

AB - Si based nanostructures such as Ge or Si 1-xGe x dots embedded in Si receive a lot of attention. This interest is driven by the reduction of device sizes as well as by their possible use in opto-electronic applications, as a possible solution to improve the radiative light emission. In this paper we give a detailed overview of the growth kinetics as observed for Ge growth in a standard production oriented chemical vapor deposition system. The island morphology and density are controlled by varying the growth conditions or by applying a thermal anneal after the island growth. Island densities up to 2.3×10 10 cm -2 have been obtained for depositions at 650°C. With increasing deposition time, the usual change-over from monomodal to bimodal island distribution is pointed out and this change-over depends on the critical island diameter, which decreases with decreasing growth temperature. Applying a thermal budget after the island growth initiates Ge surface diffusion and Si diffusion from the substrate through the islands. This results in an enhancement of the island diameter and height, and also in a reduction of island density. Furthermore, depending on the island distribution after Ge deposition, a transition from pyramid to dome or visa versa is observed after the in-situ anneal. Optical device structures require a Si cap layer. However, Si capping at 700°C, leads to a nearly total dissolution of small islands and a truncation of bigger dome-shaped islands. This can be prevented by reducing the deposition temperature and by changing the Si gas source. Clear island luminescence, is observed up to 200 K and lies in the spectral range of 1.35-1.50μm, which is interesting from the point of view of applications. In particular, this shows the potential of this material system for opto-electronic device applications. In spite of the fact that the observed PL intensity is comparable to the best reported values, we could further enhance it by a thermal treatment in a H 2 plasma.

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