Ge concentrator cells for III-V multijunction devices

D. J. Friedman, J. M. Olson, S. Ward, T. Moriarty, K. Emery, Sarah Kurtz, A. Duda, Richard King, H. L. Cotal, D. R. Lillington, J. H. Ermer, N. H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations


We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (VOC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which Voc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Print)0780357728
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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