@inproceedings{eaa46b101a2643e79481640ed4eef4c0,
title = "Ge concentrator cells for III-V multijunction devices",
abstract = "We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (VOC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which Voc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.",
author = "Friedman, {D. J.} and Olson, {J. M.} and S. Ward and T. Moriarty and K. Emery and Sarah Kurtz and A. Duda and King, {R. R.} and Cotal, {H. L.} and Lillington, {D. R.} and Ermer, {J. H.} and Karam, {N. H.}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",
year = "2000",
doi = "10.1109/PVSC.2000.916046",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "965--967",
booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",
}