Gated non-local magnetoresistance measurement in a GaAs/AlGaAs heterostructure

N. F. Deutscher, J. M. Ryan, D. K. Ferry

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have made non-local measurements of a two-dimensional electron gas (2DEG) formed at the interface of a GaAs/GaxAl1-xAs heterojunction. The magnetoresistance was measured on a standard Hall bar that had a gate placed between the current and voltage probes. We observed non-local resistance peaks at the location of the Shubnikov-de Haas oscillation maxima. The magnitude of these peaks depends on the gate voltage applied to the semiconductor between the current and voltage probes. We also observe 'Aharanov-Bohm'-like oscillations, presumably due to a localized impurity near the gate.

Original languageEnglish (US)
Article number009
Pages (from-to)1354-1357
Number of pages4
JournalSemiconductor Science and Technology
Volume9
Issue number7
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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