Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions

Cong Wang, Shengxue Yang, Wenqi Xiong, Congxin Xia, Hui Cai, Bin Chen, Xiaoting Wang, Xinzheng Zhang, Zhongming Wei, Sefaattin Tongay, Jingbo Li, Qian Liu

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)27750-27753
Number of pages4
JournalPhysical Chemistry Chemical Physics
Volume18
Issue number40
DOIs
StatePublished - 2016

Fingerprint

rectification
Heterojunctions
heterojunctions
Multilayers
Diodes
diodes
majority carriers
electric potential
Bias voltage
optoelectronic devices
electronics
Optoelectronic devices
Transition metals
interlayers
polarity
Transistors
transistors
transition metals
Modulation
modulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions. / Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian.

In: Physical Chemistry Chemical Physics, Vol. 18, No. 40, 2016, p. 27750-27753.

Research output: Contribution to journalArticle

Wang, C, Yang, S, Xiong, W, Xia, C, Cai, H, Chen, B, Wang, X, Zhang, X, Wei, Z, Tongay, S, Li, J & Liu, Q 2016, 'Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions', Physical Chemistry Chemical Physics, vol. 18, no. 40, pp. 27750-27753. https://doi.org/10.1039/c6cp04752a
Wang, Cong ; Yang, Shengxue ; Xiong, Wenqi ; Xia, Congxin ; Cai, Hui ; Chen, Bin ; Wang, Xiaoting ; Zhang, Xinzheng ; Wei, Zhongming ; Tongay, Sefaattin ; Li, Jingbo ; Liu, Qian. / Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions. In: Physical Chemistry Chemical Physics. 2016 ; Vol. 18, No. 40. pp. 27750-27753.
@article{eb10bc97efd740f196fad9f195b09954,
title = "Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions",
abstract = "Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.",
author = "Cong Wang and Shengxue Yang and Wenqi Xiong and Congxin Xia and Hui Cai and Bin Chen and Xiaoting Wang and Xinzheng Zhang and Zhongming Wei and Sefaattin Tongay and Jingbo Li and Qian Liu",
year = "2016",
doi = "10.1039/c6cp04752a",
language = "English (US)",
volume = "18",
pages = "27750--27753",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "40",

}

TY - JOUR

T1 - Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions

AU - Wang, Cong

AU - Yang, Shengxue

AU - Xiong, Wenqi

AU - Xia, Congxin

AU - Cai, Hui

AU - Chen, Bin

AU - Wang, Xiaoting

AU - Zhang, Xinzheng

AU - Wei, Zhongming

AU - Tongay, Sefaattin

AU - Li, Jingbo

AU - Liu, Qian

PY - 2016

Y1 - 2016

N2 - Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

AB - Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84991493075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991493075&partnerID=8YFLogxK

U2 - 10.1039/c6cp04752a

DO - 10.1039/c6cp04752a

M3 - Article

AN - SCOPUS:84991493075

VL - 18

SP - 27750

EP - 27753

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 40

ER -