Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions

Cong Wang, Shengxue Yang, Wenqi Xiong, Congxin Xia, Hui Cai, Bin Chen, Xiaoting Wang, Xinzheng Zhang, Zhongming Wei, Sefaattin Tongay, Jingbo Li, Qian Liu

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)27750-27753
Number of pages4
JournalPhysical Chemistry Chemical Physics
Issue number40
StatePublished - 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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