Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices

Farah E. Mamouni, Sriram K. Dixit, Ronald D. Schrimpf, Philippe C. Adell, Ivan S. Esqueda, Michael L. McLain, Hugh Barnaby, Sorin Cristoloveanu, Weize Xiong

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

The effects of gate length and drain bias on the off-state drain leakage current of irradiated fully-depleted SOI $n$-channel MOSFETs are reported. The experimental results are interpreted using a model based on the combined effects of band-to-band tunneling (BBT) and the trapped charge in the buried oxide. For negative gate-source voltages, the drain leakage current increases with the drain voltage because the electric field in the gate-to-drain overlap region is increasing. The off-state current in these devices increases with total ionizing dose due to oxide trapped charge build up in the buried oxide, enhanced by the BBT mechanism. The experimental data show that these effects are more significant for devices with shorter gate-lengths. Simulation results suggest that the BBT-generated holes are more likely to drift all the way from the drain to the source in shorter devices, enhancing the drain leakage current, while they tend to tunnel across the gate oxide in longer devices.

Original languageEnglish (US)
Article number4723743
Pages (from-to)3259-3264
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
StatePublished - Dec 1 2008

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Keywords

  • Band-to-band tunneling (BBT)
  • Fully depleted silicon-on-insulator (FDSOI)
  • Gate induced drain leakage current (GIDL)
  • Leakage current and total ionizing dose (TID)
  • Metal-oxide-semiconductor-field-effect transistor (MOSFET)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Mamouni, F. E., Dixit, S. K., Schrimpf, R. D., Adell, P. C., Esqueda, I. S., McLain, M. L., Barnaby, H., Cristoloveanu, S., & Xiong, W. (2008). Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices. IEEE Transactions on Nuclear Science, 55(6), 3259-3264. [4723743]. https://doi.org/10.1109/TNS.2008.2006500