@article{c7e2153d356940269494e3fd6bafb054,
title = "Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices",
abstract = "The effects of gate length and drain bias on the off-state drain leakage current of irradiated fully-depleted SOI $n$-channel MOSFETs are reported. The experimental results are interpreted using a model based on the combined effects of band-to-band tunneling (BBT) and the trapped charge in the buried oxide. For negative gate-source voltages, the drain leakage current increases with the drain voltage because the electric field in the gate-to-drain overlap region is increasing. The off-state current in these devices increases with total ionizing dose due to oxide trapped charge build up in the buried oxide, enhanced by the BBT mechanism. The experimental data show that these effects are more significant for devices with shorter gate-lengths. Simulation results suggest that the BBT-generated holes are more likely to drift all the way from the drain to the source in shorter devices, enhancing the drain leakage current, while they tend to tunnel across the gate oxide in longer devices.",
keywords = "Band-to-band tunneling (BBT), Fully depleted silicon-on-insulator (FDSOI), Gate induced drain leakage current (GIDL), Leakage current and total ionizing dose (TID), Metal-oxide-semiconductor-field-effect transistor (MOSFET)",
author = "Mamouni, {Farah E.} and Dixit, {Sriram K.} and Schrimpf, {Ronald D.} and Adell, {Philippe C.} and Esqueda, {Ivan S.} and McLain, {Michael L.} and Hugh Barnaby and Sorin Cristoloveanu and Weize Xiong",
note = "Funding Information: Manuscript received July 11, 2008; revised September 03, 2008. Current version published December 31, 2008. This work was supported by the Air Force Office of Scientific Research (AFOSR) through the MURI and NEEP programs. Farah E. Mamouni and Ronald D. Schrimpf are with the Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37232 USA (fax: 615-343-6614, e-mail: farah.el.mamouni@vanderbilt.edu). Sriram K. Dixit is with the Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN 37235 USA. Philippe C. Adell is with the Jet Propulsion Laboratory, Pasadena, CA 91109 USA. Hugh J. Barnaby, Ivan S. Esqueda, and Michael L. McLain are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA. Sorin Cristoloveanu is with IMEP-INP Grenoble MINATEC, 38016 Grenoble, France. Xiong Weize (Wade) is with Texas Instruments Inc., Dallas, TX, 75808 USA. Digital Object Identifier 10.1109/TNS.2008.2006500 Fig. 1. Semi log plot of - characteristics plotted at several x-ray doses. The irradiations were conducted with 10 keV x-ray at a dose rate of 31.5 krad(SiO )/min. The floating body devices were irradiated with a front gate voltage of 0.8 V, a back gate voltage of 3 V and both drain and source grounded. The drain was biased at 1.3 V during the measurement. The gate length is 0.5 m.",
year = "2008",
month = dec,
doi = "10.1109/TNS.2008.2006500",
language = "English (US)",
volume = "55",
pages = "3259--3264",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}