Gate-Field-Induced Carrier Heating in Si MOSFET's

M. Tanimoto, D. K. Ferry

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have used Si MOSFET's to study the variation of the channel Hall mobility and noise temperature with the gate voltage. From the Hall mobility measurements, a new empirical expression is found to describe the mobility degradation with gate voltage over a wide range of transverse electric field. By measuring the thermal noise, it is found that the channel carriers appear to be heated by the gate electric field and that the excess noise temperature varies quadratically with gate field.

Original languageEnglish (US)
Pages (from-to)246-248
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number7
DOIs
StatePublished - Jul 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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