Gate-Field-Induced Carrier Heating in Si MOSFET's

M. Tanimoto; D. K. Ferry

doi:10.1109/EDL.1983.25720

Gate-Field-Induced Carrier Heating in Si MOSFET's

M. Tanimoto, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have used Si MOSFET's to study the variation of the channel Hall mobility and noise temperature with the gate voltage. From the Hall mobility measurements, a new empirical expression is found to describe the mobility degradation with gate voltage over a wide range of transverse electric field. By measuring the thermal noise, it is found that the channel carriers appear to be heated by the gate electric field and that the excess noise temperature varies quadratically with gate field.

Original language	English (US)
Pages (from-to)	246-248
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	4
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1983.25720
State	Published - Jul 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1983.25720

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abstract = "We have used Si MOSFET's to study the variation of the channel Hall mobility and noise temperature with the gate voltage. From the Hall mobility measurements, a new empirical expression is found to describe the mobility degradation with gate voltage over a wide range of transverse electric field. By measuring the thermal noise, it is found that the channel carriers appear to be heated by the gate electric field and that the excess noise temperature varies quadratically with gate field.",

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AB - We have used Si MOSFET's to study the variation of the channel Hall mobility and noise temperature with the gate voltage. From the Hall mobility measurements, a new empirical expression is found to describe the mobility degradation with gate voltage over a wide range of transverse electric field. By measuring the thermal noise, it is found that the channel carriers appear to be heated by the gate electric field and that the excess noise temperature varies quadratically with gate field.

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Gate-Field-Induced Carrier Heating in Si MOSFET's

Abstract

ASJC Scopus subject areas

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