Abstract

Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different directions with each having different lifetime values. By studying the effects of diode reverse bias and gate voltage on the current flow direction during the reverse recovery, we present a simple approach to extract meaningful lifetime values, which can be used to determine material quality at different locations in the drift region of the LDMOS devices.

Original languageEnglish (US)
Article number6895242
Pages (from-to)1079-1081
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number11
DOIs
StatePublished - Nov 1 2014

Keywords

  • Carrier lifetimes
  • laterally-diffused MOSFET
  • semiconductor defects
  • semiconductor device measurements
  • semiconductor materials
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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