Abstract

A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.

Original languageEnglish (US)
Pages (from-to)122-125
Number of pages4
JournalJournal of Crystal Growth
Volume371
DOIs
StatePublished - May 15 2013

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Keywords

  • Characterization
  • Heterojunction semiconductor devices
  • Molecular beam epitaxy
  • Semiconducting II-VI materials
  • Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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