GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

S. Q. Yu, Yu Cao, Shane Johnson, Y. H. Zhang, Y. Z. Huang

Research output: Contribution to journalArticle

Abstract

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2× 105) that is much larger than the first (∼5× 104) and second (∼3× 104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSbAlGaAsSbGaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.

Original languageEnglish (US)
Pages (from-to)56-61
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
DOIs
StatePublished - Feb 8 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers'. Together they form a unique fingerprint.

  • Cite this