GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

S. Q. Yu, Yu Cao, Shane Johnson, Y. H. Zhang, Y. Z. Huang

Research output: Contribution to journalArticle

Abstract

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2× 105) that is much larger than the first (∼5× 104) and second (∼3× 104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSbAlGaAsSbGaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.

Original languageEnglish (US)
Pages (from-to)56-61
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
DOIs
StatePublished - 2008

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triangles
Semiconductor lasers
Resonators
resonators
semiconductor lasers
Wavelength
Tuning
Heterojunctions
wavelengths
tuning
threshold currents
continuous radiation
lasing
Q factors
wafers
injection
cavities

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers. / Yu, S. Q.; Cao, Yu; Johnson, Shane; Zhang, Y. H.; Huang, Y. Z.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 1, 2008, p. 56-61.

Research output: Contribution to journalArticle

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AB - Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2× 105) that is much larger than the first (∼5× 104) and second (∼3× 104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSbAlGaAsSbGaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.

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