Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Scandium 72%
• Gallium nitride 63%
• Nitrides 55%
• Silicon carbide 49%
• Growth temperature 13%
• Photoelectron spectroscopy 9%
• Carrier concentration 8%
• Substrates 8%
• Ultraviolet photoelectron spectroscopy 6%
• Low energy electron diffraction 6%
• Rutherford backscattering spectroscopy 5%
• X rays 5%
• Valence bands 5%
• Electron energy loss spectroscopy 5%
• Lattice mismatch 5%
• Fermi level 4%
• Epilayers 4%
• Core levels 4%
• Scanning electron microscopy 4%
• Transition metals 4%
• Capacitance measurement 4%
• Phase stability 4%
• Diffraction patterns 4%
• Epitaxial growth 4%
• Sheet resistance 3%
• Voltage measurement 3%
• Thick films 3%
• Optoelectronic devices 3%
• Energy gap 3%
• Ammonia 3%
• Crystalline materials 3%
• Transmission electron microscopy 2%
• X ray diffraction 2%
• Semiconductor materials 2%
• Thermodynamics 2%
• Oxygen 2%
• Silicon 2%
• Carbon 2%
• Hot Temperature 1%

Physics & Astronomy

• scandium 58%
• gallium nitrides 53%
• silicon carbides 44%
• nitrides 42%
• molecular beam epitaxy 39%
• gases 23%
• photoelectron spectroscopy 7%
• x ray spectroscopy 6%
• electrical resistivity 5%
• probes 5%
• metal nitrides 4%
• scanning electron microscopy 4%
• ammonia 3%
• optoelectronic devices 3%
• electrical measurement 2%
• thick films 2%
• backscattering 2%
• temperature 2%
• electron diffraction 2%
• transition metals 2%
• diffraction patterns 2%
• energy dissipation 2%
• capacitance 2%
• attenuation 2%
• electron energy 2%
• valence 2%
• thermodynamics 2%
• carbon 2%
• optimization 2%
• transmission electron microscopy 2%
• oxygen 1%
• curves 1%
• silicon 1%
• diffraction 1%
• spectroscopy 1%
• electronics 1%
• x rays 1%
• energy 0%

Chemical Compounds

• Molecular Beam Epitaxy 66%
• Silicon Carbide 51%
• Nitride 44%
• Gas 24%
• Surface 14%
• Liquid Film 12%
• Photoelectron Spectroscopy 4%
• Reflection Electron Energy Loss Spectroscopy 4%
• Probe 4%
• Low Energy Electron Diffraction 3%
• Ultra-Violet Photoelectron Spectroscopy 3%
• Rutherford Backscattering Spectroscopy 3%
• Phase Stability 2%
• Sheet Resistance 2%
• Core Level 2%
• Scanning Electron Microscopy 2%
• Fermi Level 2%
• Valence Band 2%
• Reduction 2%
• Optoelectronics 2%
• Hexagonal Space Group 1%
• Ammonia 1%
• Semiconductor 1%
• Band Gap 1%
• Transition Element 1%
• Transmission Electron Microscopy 1%
• X-Ray Diffraction 1%
• Dioxygen 1%
• Carbon Atom 1%
• Application 0%