GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive, Hal Emmer, Christopher T. Chen, Chaomin Zhang, Christiana Honsberg, Harry Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2064-2069
Number of pages6
ISBN (Electronic)9781538685297
DOIs
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period6/10/186/15/18

Keywords

  • band alignment
  • doping
  • Gallium Phosphide
  • morphology
  • Silicon heterojunction

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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