GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive; Hal Emmer; Christopher T. Chen; Chaomin Zhang; Christiana Honsberg; Harry Atwater

doi:10.1109/PVSC.2018.8547704

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive, Hal Emmer, Christopher T. Chen, Chaomin Zhang, Christiana Honsberg, Harry Atwater

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2064-2069
Number of pages	6
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547704
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

Gallium Phosphide
Silicon heterojunction
band alignment
doping
morphology

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547704

Cite this

Saive, R., Emmer, H., Chen, C. T., Zhang, C., Honsberg, C., & Atwater, H. (2018). GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 2064-2069). Article 8547704 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547704

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. / Saive, Rebecca; Emmer, Hal; Chen, Christopher T. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2064-2069 8547704 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saive, R, Emmer, H, Chen, CT, Zhang, C, Honsberg, C & Atwater, H 2018, GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547704, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 2064-2069, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547704

Saive R, Emmer H, Chen CT, Zhang C, Honsberg C, Atwater H. GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2064-2069. 8547704. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547704

Saive, Rebecca ; Emmer, Hal ; Chen, Christopher T. et al. / GaP/Si Heterojunction Solar Cells : An Interface, Doping and Morphology Study. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2064-2069 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{313b9b2fecd84a0888646abae8e01a53,

title = "GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study",

abstract = "We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.",

keywords = "Gallium Phosphide, Silicon heterojunction, band alignment, doping, morphology",

author = "Rebecca Saive and Hal Emmer and Chen, {Christopher T.} and Chaomin Zhang and Christiana Honsberg and Harry Atwater",

note = "Funding Information: The authors acknowledge the Molecular Foundry for generously hosting the MOCVD growth and the Caltech MMRC for providing the XPS analytic tools. We thank Laura Ding, Shaul Aloni, Adam Nielander, Noah Plymale, Amanda Shing and Lars Korte for helpful advice with measurements and data interpretation. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization and EEC1041895 for other electrical and structural measurements. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547704",

language = "English (US)",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2064--2069",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

TY - GEN

T1 - GaP/Si Heterojunction Solar Cells

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

AU - Saive, Rebecca

AU - Emmer, Hal

AU - Chen, Christopher T.

AU - Zhang, Chaomin

AU - Honsberg, Christiana

AU - Atwater, Harry

N1 - Funding Information: The authors acknowledge the Molecular Foundry for generously hosting the MOCVD growth and the Caltech MMRC for providing the XPS analytic tools. We thank Laura Ding, Shaul Aloni, Adam Nielander, Noah Plymale, Amanda Shing and Lars Korte for helpful advice with measurements and data interpretation. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization and EEC1041895 for other electrical and structural measurements. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Publisher Copyright: © 2018 IEEE.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

AB - We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

KW - Gallium Phosphide

KW - Silicon heterojunction

KW - band alignment

KW - doping

KW - morphology

UR - http://www.scopus.com/inward/record.url?scp=85059907014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059907014&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547704

DO - 10.1109/PVSC.2018.8547704

M3 - Conference contribution

AN - SCOPUS:85059907014

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 2064

EP - 2069

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 10 June 2018 through 15 June 2018

ER -

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Abstract

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Keywords

ASJC Scopus subject areas

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