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GaN Vertical-Channel Junction Field-Effect Transistors with Regrown p-GaN by MOCVD
Chen Yang, Houqiang Fu, Viswanathan Naveen Kumar, Kai Fu, Hanxiao Liu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Fernando A. Ponce, Dragica Vasileska, Yuji Zhao
- Physics
- Sustainability Initiative
- Computational Nanoscience, Center for (CCN)
- Solid State Electronics Research Center (CSSER)
- Nano-Electronics, Arizona Institute of (AINE)
- Photonics Innovation, Center for (CPhI)
- Electrical Engineering
- QESST ERC Consortium
- Global Futures Laboratory, Julie Ann Wrigley (GFL)
- Core Facilities (CF)
- Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
Research output: Contribution to journal › Article › peer-review
27
Scopus
citations