GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals

Shishir Shukla, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

This work implements three discrete switched mode power amplifier (PA) topologies, namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The designs are analyzed and compared with respect to non-idealities such as bond-wire effects and input signal duty cycle variation. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergoes duty cycle variation. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for GaN-based discrete power amplifiers. This inverse class-E PA achieves 61.5% drain efficiency at 37.7dBm output power in the 880MHz band.

Original languageEnglish (US)
Title of host publicationProceedings of the 2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-91
Number of pages4
ISBN (Electronic)9781509034574
DOIs
StatePublished - Mar 10 2017
Event2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017 - Phoenix, United States
Duration: Jan 15 2017Jan 18 2017

Other

Other2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017
Country/TerritoryUnited States
CityPhoenix
Period1/15/171/18/17

Keywords

  • Class-E
  • GaN-on-Si
  • power amplifiers
  • RF-PWM
  • switch-mode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications

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