Abstract

Electron trapping in the defect sites of the GaN layer and the interfaces of various layers in HEMT devices are responsible for current collapse in AlGaN/GaN HEMTs. The trapping of electrons is mainly affected by the electric field at the gate edge in these devices. In the present work, an Electro-thermal simulator that couples the Monte Carlo transport kernel, the Poisson kernel and a thermal solver has been developed at ASU. This simulator has been used to model the physics behind the effect of shielding on the thermal and field characteristics of these devices. This work is a first study of this type.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
DOIs
Publication statusPublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

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ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Padmanabhan, B., Vasileska, D., & Goodnick, S. (2012). GaN HEMTs reliability the role of shielding. In Proceedings of the IEEE Conference on Nanotechnology [6322177] https://doi.org/10.1109/NANO.2012.6322177