Abstract
Semiconductor betavoltaic converters use energy from radioisotope sources to generate electricity for remote applications requiring power for 5-50 years. To be to competitive with thermoelectric devices, they must achieve an efficiency above 20% [1].This paper presents the design rules and efficiency calculations for such high efficiency GaN betavoltaic converters, and experimentally demonstrates the radiation tolerance of GaN.
Original language | English (US) |
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Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
Pages | 102-105 |
Number of pages | 4 |
State | Published - 2005 |
Externally published | Yes |
Event | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005 |
Other
Other | 31st IEEE Photovoltaic Specialists Conference - 2005 |
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Country/Territory | United States |
City | Lake Buena Vista, FL |
Period | 1/3/05 → 1/7/05 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Control and Systems Engineering