GaN betavoltaic energy converters

Christiana Honsberg, William A. Doolittle, Mark Allen, Chris Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations

Abstract

Semiconductor betavoltaic converters use energy from radioisotope sources to generate electricity for remote applications requiring power for 5-50 years. To be to competitive with thermoelectric devices, they must achieve an efficiency above 20% [1].This paper presents the design rules and efficiency calculations for such high efficiency GaN betavoltaic converters, and experimentally demonstrates the radiation tolerance of GaN.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages102-105
Number of pages4
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period1/3/051/7/05

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

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  • Cite this

    Honsberg, C., Doolittle, W. A., Allen, M., & Wang, C. (2005). GaN betavoltaic energy converters. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 102-105)