TY - JOUR
T1 - GaN-based high-periodicity multiple quantum well solar cells
T2 - Degradation under optical and electrical stress
AU - Caria, A.
AU - De Santi, C.
AU - Zamperetti, F.
AU - Huang, X.
AU - Fu, H.
AU - Chen, H.
AU - Zhao, Y.
AU - Neviani, A.
AU - Meneghesso, G.
AU - Zanoni, E.
AU - Meneghini, M.
N1 - Funding Information:
This research was partly performed within project INTERNET OF THINGS: SVILUPPI METODOLOGICI, TECNOLOGICI E APPLICATIVI, co-founded (2018–2022) by the Italian Ministry of Education, Universities and Research (MIUR) under the aegis of the “Fondo per il finanziamento dei dipartimenti universitari di eccellenza” initiative (Law 232/2016 ).
Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/11
Y1 - 2020/11
N2 - We investigate the degradation of InGaN-GaN MQW solar cells under optical and electrical stress. We submitted the devices to high temperature, high optical power stress and we found that, under optical stress, the devices show a moderate decrease in open-circuit voltage, possibly due to creation of defect-related shunt paths. This degradation is partially recovered after room temperature storage. The stronger decrease of open-circuit voltage under electrical stress at high current suggests a role of carrier flow in the degradation.
AB - We investigate the degradation of InGaN-GaN MQW solar cells under optical and electrical stress. We submitted the devices to high temperature, high optical power stress and we found that, under optical stress, the devices show a moderate decrease in open-circuit voltage, possibly due to creation of defect-related shunt paths. This degradation is partially recovered after room temperature storage. The stronger decrease of open-circuit voltage under electrical stress at high current suggests a role of carrier flow in the degradation.
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U2 - 10.1016/j.microrel.2020.113802
DO - 10.1016/j.microrel.2020.113802
M3 - Article
AN - SCOPUS:85096527313
SN - 0026-2714
VL - 114
JO - Microelectronics Reliability
JF - Microelectronics Reliability
M1 - 113802
ER -