GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

A. Caria, C. De Santi, F. Zamperetti, X. Huang, H. Fu, H. Chen, Y. Zhao, A. Neviani, G. Meneghesso, E. Zanoni, M. Meneghini

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the degradation of InGaN-GaN MQW solar cells under optical and electrical stress. We submitted the devices to high temperature, high optical power stress and we found that, under optical stress, the devices show a moderate decrease in open-circuit voltage, possibly due to creation of defect-related shunt paths. This degradation is partially recovered after room temperature storage. The stronger decrease of open-circuit voltage under electrical stress at high current suggests a role of carrier flow in the degradation.

Original languageEnglish (US)
Article number113802
JournalMicroelectronics Reliability
Volume114
DOIs
StatePublished - Nov 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress'. Together they form a unique fingerprint.

Cite this