Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application

M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, Hugh Barnaby, I. S. Esqueda

Research output: Contribution to journalArticle

6 Scopus citations


We present data on radiation-induced effects in chalcogenide glasses that also trigger radiation induced structural reorganization contributing to silver (Ag) diffusion. To study these effects and silver diffusion, depending on the radiation dose, fi lms were prepared and analyzed using Raman spectroscopy, X-ray diffraction and Energy Dispersion X-ray Spectroscopy. The results show a structural development occurring in films containing 45.4 at.% Ge with increasing radiation dose defined by increase in the edge-sharing/corner-sharing ratio, higher ethane-like unit values and rise of the amount of Ag diffused within the system. Utilizing these effects, a resistance based radiation sensing device has been created. The I-V curves characterizing the sensor operation demonstrate decreased device resistance as a result of the radiation.

Original languageEnglish (US)
Pages (from-to)195-199
Number of pages5
JournalJournal of Non-Crystalline Solids
StatePublished - Jan 1 2013


  • Chalcogenide glasses
  • Radiation effects
  • Radiation induced ag diffusion
  • Radiation sensing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application'. Together they form a unique fingerprint.

  • Cite this