Gallium nitride grown by molecular beam epitaxy at low temperatures

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Gallium nitride 88%
• Growth temperature 62%
• Photoluminescence 41%
• Defect density 36%
• Nitrogen 35%
• Optical properties 32%
• Structural properties 27%
• Atomic beams 27%
• Temperature 25%
• Growth kinetics 18%
• Epitaxial growth 18%
• Raman spectroscopy 17%
• Sapphire 17%
• X ray diffraction analysis 16%
• Crystallinity 15%
• Optoelectronic devices 15%
• Lithography 14%
• X ray diffraction 12%
• Plasmas 11%
• Stabilization 10%
• Fluxes 10%
• Scanning electron microscopy 10%
• Substrates 9%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Nitride 62%
• Metalorganic Molecular Beam Epitaxy 43%
• Atomic Beam 37%
• Cubic Space Group 35%
• Photoluminescence 33%
• Optical Property 31%
• Epitaxial Growth 26%
• Nitrogen 26%
• X-Ray Diffractometry 22%
• Optoelectronics 19%
• Disorder 18%
• Hexagonal Space Group 16%
• Crystallinity 16%
• Raman Spectroscopy 16%
• Scanning Electron Microscopy 12%
• X-Ray Diffraction 10%
• Liquid Film 10%
• Surface 6%

Physics & Astronomy

• gallium nitrides 75%
• molecular beam epitaxy 54%
• nitrogen 17%
• temperature 11%
• photoluminescence 11%
• optical properties 10%
• absorptance 10%
• atomic beams 9%
• neutral beams 9%
• defects 8%
• optoelectronic devices 8%
• epitaxy 7%
• x rays 7%
• crystallinity 7%
• Raman spectroscopy 6%
• sapphire 6%
• stabilization 6%
• lithography 6%
• disorders 6%
• scanning electron microscopy 5%
• kinetics 4%
• diffraction 4%