Gallium-nitride-based devices on silicon

A. Dadgar; M. Poschenrieder; I. Daumiller; M. Kunze; A. Strittmatter; T. Riemann; F. Bertram; J. Bläsing; F. Schulze; A. Reiher; A. Krtschil; O. Contreras; A. Kaluza; A. Modlich; M. Kamp; L. Reißmann; A. Diez; J. Christen; Fernando Ponce; D. Bimberg; E. Kohn; A. Krost

doi:10.1002/pssc.200303123

Gallium-nitride-based devices on silicon

A. Dadgar, M. Poschenrieder, I. Daumiller, M. Kunze, A. Strittmatter, T. Riemann, F. Bertram, J. Bläsing, F. Schulze, A. Reiher, A. Krtschil, O. Contreras, A. Kaluza, A. Modlich, M. Kamp, L. Reißmann, A. Diez, J. Christen, Fernando Ponce, D. BimbergE. Kohn, A. Krost

Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

13 Scopus citations

Abstract

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	1940-1949
Number of pages	10
Volume	0
Edition	6 SPEC. ISS.
DOIs	https://doi.org/10.1002/pssc.200303123
State	Published - 2003

ASJC Scopus subject areas

Condensed Matter Physics

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Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., ... Krost, A. (2003). Gallium-nitride-based devices on silicon. In Physica Status Solidi C: Conferences (6 SPEC. ISS. ed., Vol. 0, pp. 1940-1949) https://doi.org/10.1002/pssc.200303123

Dadgar, A, Poschenrieder, M, Daumiller, I, Kunze, M, Strittmatter, A, Riemann, T, Bertram, F, Bläsing, J, Schulze, F, Reiher, A, Krtschil, A, Contreras, O, Kaluza, A, Modlich, A, Kamp, M, Reißmann, L, Diez, A, Christen, J, Ponce, F, Bimberg, D, Kohn, E & Krost, A 2003, Gallium-nitride-based devices on silicon. in Physica Status Solidi C: Conferences. 6 SPEC. ISS. edn, vol. 0, pp. 1940-1949. https://doi.org/10.1002/pssc.200303123

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abstract = "GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.",

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AU - Dadgar, A.

AU - Poschenrieder, M.

AU - Daumiller, I.

AU - Kunze, M.

AU - Strittmatter, A.

AU - Riemann, T.

AU - Bertram, F.

AU - Bläsing, J.

AU - Schulze, F.

AU - Reiher, A.

AU - Krtschil, A.

AU - Contreras, O.

AU - Kaluza, A.

AU - Modlich, A.

AU - Kamp, M.

AU - Reißmann, L.

AU - Diez, A.

AU - Christen, J.

AU - Ponce, Fernando

AU - Bimberg, D.

AU - Kohn, E.

AU - Krost, A.

PY - 2003

Y1 - 2003

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AB - GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

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Gallium-nitride-based devices on silicon

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