GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi C: Conferences|
|Number of pages||10|
|Edition||6 SPEC. ISS.|
|State||Published - 2003|
ASJC Scopus subject areas
- Condensed Matter Physics