Gallium-nitride-based devices on silicon

A. Dadgar, M. Poschenrieder, I. Daumiller, M. Kunze, A. Strittmatter, T. Riemann, F. Bertram, J. Bläsing, F. Schulze, A. Reiher, A. Krtschil, O. Contreras, A. Kaluza, A. Modlich, M. Kamp, L. Reißmann, A. Diez, J. Christen, Fernando Ponce, D. BimbergE. Kohn, A. Krost

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations

Abstract

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages1940-1949
Number of pages10
Volume0
Edition6 SPEC. ISS.
DOIs
StatePublished - 2003

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., ... Krost, A. (2003). Gallium-nitride-based devices on silicon. In Physica Status Solidi C: Conferences (6 SPEC. ISS. ed., Vol. 0, pp. 1940-1949) https://doi.org/10.1002/pssc.200303123