GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Melissa J. Archer, Daniel C. Law, Shoghig Mesropian, Moran Haddad, Christopher M. Fetzer, Arthur C. Ackerman, Corinne Ladous, Richard R. King, Harry A. Atwater

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

Original languageEnglish (US)
Article number103503
JournalApplied Physics Letters
Volume92
Issue number10
DOIs
StatePublished - Mar 24 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Archer, M. J., Law, D. C., Mesropian, S., Haddad, M., Fetzer, C. M., Ackerman, A. C., Ladous, C., King, R. R., & Atwater, H. A. (2008). GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates. Applied Physics Letters, 92(10), [103503]. https://doi.org/10.1063/1.2887904