Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers

S. Q. Yu, X. Jin, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

GaAsSbGaAs quantum well (QW) lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 μm that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ∼75%, the transparency current density is ∼120 A cm2, and the threshold characteristic temperature is ∼60 K, all typical for GaAsSbGaAs based edge emitting lasers. The extracted gain constant is ∼800 cm-1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.

Original languageEnglish (US)
Pages (from-to)1617-1621
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number3
DOIs
StatePublished - May 2006

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Quantum well lasers
quantum well lasers
Molecular beam epitaxy
Semiconductor quantum wells
molecular beam epitaxy
quantum wells
saturation
Lasers
Electroluminescence
Quantum efficiency
electroluminescence
Transparency
lasers
lasing
quantum efficiency
ridges
Current density
injection
current density
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

@article{e1d3c0d466d94022aaff95169e63c1ae,
title = "Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers",
abstract = "GaAsSbGaAs quantum well (QW) lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 μm that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ∼75{\%}, the transparency current density is ∼120 A cm2, and the threshold characteristic temperature is ∼60 K, all typical for GaAsSbGaAs based edge emitting lasers. The extracted gain constant is ∼800 cm-1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.",
author = "Yu, {S. Q.} and X. Jin and Shane Johnson and Yong-Hang Zhang",
year = "2006",
month = "5",
doi = "10.1116/1.2192534",
language = "English (US)",
volume = "24",
pages = "1617--1621",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers

AU - Yu, S. Q.

AU - Jin, X.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2006/5

Y1 - 2006/5

N2 - GaAsSbGaAs quantum well (QW) lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 μm that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ∼75%, the transparency current density is ∼120 A cm2, and the threshold characteristic temperature is ∼60 K, all typical for GaAsSbGaAs based edge emitting lasers. The extracted gain constant is ∼800 cm-1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.

AB - GaAsSbGaAs quantum well (QW) lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 μm that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ∼75%, the transparency current density is ∼120 A cm2, and the threshold characteristic temperature is ∼60 K, all typical for GaAsSbGaAs based edge emitting lasers. The extracted gain constant is ∼800 cm-1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.

UR - http://www.scopus.com/inward/record.url?scp=33744821382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744821382&partnerID=8YFLogxK

U2 - 10.1116/1.2192534

DO - 10.1116/1.2192534

M3 - Article

AN - SCOPUS:33744821382

VL - 24

SP - 1617

EP - 1621

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -