GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

Shane Johnson, C. Z. Guo, S. Chaparro, Yu G. Sadofyev, J. Wang, Yu Cao, N. Samal, J. Xu, S. Q. Yu, D. Ding, Yong-Hang Zhang

Research output: Contribution to journalConference article

40 Scopus citations

Abstract

The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

Original languageEnglish (US)
Pages (from-to)521-525
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
StatePublished - Apr 1 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

Keywords

  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Johnson, S., Guo, C. Z., Chaparro, S., Sadofyev, Y. G., Wang, J., Cao, Y., Samal, N., Xu, J., Yu, S. Q., Ding, D., & Zhang, Y-H. (2003). GaAsSb/GaAs band alignment evaluation for long-wave photonic applications. Journal of Crystal Growth, 251(1-4), 521-525. https://doi.org/10.1016/S0022-0248(02)02294-7