GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)

Aashi R. Gurijala, Amber A. Chow, Shaurya Khanna, Nikhil C. Suresh, Pranav V. Penmatcha, Siddarth V. Jandhyala, Mohammed Sahal, Wesley Peng, Thilina N. Balasooriya, Sukesh Ram, Timoteo Diaz, Michelle Bertram, Christian E. Cornejo, Karen L. Kavanagh, Robert J. Culbertson, Nicole Herbots

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds