GaAs-substrate-based long-wave active materials with type-II band alignments

Shane Johnson, S. Chaparro, J. Wang, N. Samal, Yu Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David Smith, C. Z. Guo, P. Dowd, W. Braun, Yong-Hang Zhang

Research output: Contribution to journalConference article

15 Scopus citations

Abstract

Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

Original languageEnglish (US)
Pages (from-to)1501-1504
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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