15 Citations (Scopus)

Abstract

Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

Original languageEnglish (US)
Pages (from-to)1501-1504
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 2001

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planetary waves
Semiconductor quantum wells
alignment
quantum wells
Substrates
Linewidth
Modulation
modulation
configurations
Chemical analysis
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

GaAs-substrate-based long-wave active materials with type-II band alignments. / Johnson, Shane; Chaparro, S.; Wang, J.; Samal, N.; Cao, Yu; Chen, Z. B.; Navarro, C.; Xu, J.; Yu, S. Q.; Smith, David; Guo, C. Z.; Dowd, P.; Braun, W.; Zhang, Yong-Hang.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1501-1504.

Research output: Contribution to journalArticle

Johnson, Shane ; Chaparro, S. ; Wang, J. ; Samal, N. ; Cao, Yu ; Chen, Z. B. ; Navarro, C. ; Xu, J. ; Yu, S. Q. ; Smith, David ; Guo, C. Z. ; Dowd, P. ; Braun, W. ; Zhang, Yong-Hang. / GaAs-substrate-based long-wave active materials with type-II band alignments. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 ; Vol. 19, No. 4. pp. 1501-1504.
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abstract = "Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.",
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T1 - GaAs-substrate-based long-wave active materials with type-II band alignments

AU - Johnson, Shane

AU - Chaparro, S.

AU - Wang, J.

AU - Samal, N.

AU - Cao, Yu

AU - Chen, Z. B.

AU - Navarro, C.

AU - Xu, J.

AU - Yu, S. Q.

AU - Smith, David

AU - Guo, C. Z.

AU - Dowd, P.

AU - Braun, W.

AU - Zhang, Yong-Hang

PY - 2001/7

Y1 - 2001/7

N2 - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

AB - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

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