GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Y. H. Lo; R. J. Deri; J. Harbison; B. J. Skromme; M. Seto; D. M. Hwang; T. P. Lee

doi:10.1063/1.100026

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Y. H. Lo, R. J. Deri, J. Harbison, B. J. Skromme, M. Seto, D. M. Hwang, T. P. Lee

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9 Scopus citations

Abstract

The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×10¹⁷ cm^-3 and 2×10¹⁷ cm^-3 are estimated for material on (100) and 3 ° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.

Original language	English (US)
Pages (from-to)	1242-1244
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	14
DOIs	https://doi.org/10.1063/1.100026
State	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100026

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@article{bef9601b06524fd682e72e0c08193708,

title = "GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy",

abstract = "The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm-3 and 2×1017 cm-3 are estimated for material on (100) and 3 ° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.",

author = "Lo, {Y. H.} and Deri, {R. J.} and J. Harbison and Skromme, {B. J.} and M. Seto and Hwang, {D. M.} and Lee, {T. P.}",

year = "1988",

doi = "10.1063/1.100026",

language = "English (US)",

volume = "53",

pages = "1242--1244",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

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TY - JOUR

T1 - GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

AU - Lo, Y. H.

AU - Deri, R. J.

AU - Harbison, J.

AU - Skromme, B. J.

AU - Seto, M.

AU - Hwang, D. M.

AU - Lee, T. P.

PY - 1988

Y1 - 1988

N2 - The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm-3 and 2×1017 cm-3 are estimated for material on (100) and 3 ° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.

AB - The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm-3 and 2×1017 cm-3 are estimated for material on (100) and 3 ° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.

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VL - 53

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EP - 1244

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

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