GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Y. H. Lo, R. J. Deri, J. Harbison, B. J. Skromme, M. Seto, D. M. Hwang, T. P. Lee

Research output: Contribution to journalArticle

8 Scopus citations


The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm-3 and 2×1017 cm-3 are estimated for material on (100) and 3 ° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.

Original languageEnglish (US)
Pages (from-to)1242-1244
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - Dec 1 1988


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M., & Lee, T. P. (1988). GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy. Applied Physics Letters, 53(14), 1242-1244.