GaAs nanowire array solar cells with axial p-i-n junctions

Maoqing Yao, Ningfeng Huang, Sen Cong, Chun Yung Chi, M. Ashkan Seyedi, Yen Ting Lin, Yu Cao, Michelle L. Povinelli, P. Daniel Dapkus, Chongwu Zhou

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Original languageEnglish (US)
Pages (from-to)3293-3303
Number of pages11
JournalNano Letters
Volume14
Issue number6
DOIs
StatePublished - Jun 11 2014
Externally publishedYes

Fingerprint

Solar cell arrays
p-i-n junctions
Nanowires
nanowires
solar cells
Solar cells
Cathodoluminescence
Open circuit voltage
research and development
cathodoluminescence
open circuit voltage
p-n junctions
Structural properties
high voltages
Electric properties
Optical properties
electrical properties
Doping (additives)
gallium arsenide
wire

Keywords

  • axial junction
  • gallium arsenide
  • MOCVD
  • Nanowires
  • solar cells

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Yao, M., Huang, N., Cong, S., Chi, C. Y., Seyedi, M. A., Lin, Y. T., ... Zhou, C. (2014). GaAs nanowire array solar cells with axial p-i-n junctions. Nano Letters, 14(6), 3293-3303. https://doi.org/10.1021/nl500704r

GaAs nanowire array solar cells with axial p-i-n junctions. / Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun Yung; Seyedi, M. Ashkan; Lin, Yen Ting; Cao, Yu; Povinelli, Michelle L.; Dapkus, P. Daniel; Zhou, Chongwu.

In: Nano Letters, Vol. 14, No. 6, 11.06.2014, p. 3293-3303.

Research output: Contribution to journalArticle

Yao, M, Huang, N, Cong, S, Chi, CY, Seyedi, MA, Lin, YT, Cao, Y, Povinelli, ML, Dapkus, PD & Zhou, C 2014, 'GaAs nanowire array solar cells with axial p-i-n junctions', Nano Letters, vol. 14, no. 6, pp. 3293-3303. https://doi.org/10.1021/nl500704r
Yao M, Huang N, Cong S, Chi CY, Seyedi MA, Lin YT et al. GaAs nanowire array solar cells with axial p-i-n junctions. Nano Letters. 2014 Jun 11;14(6):3293-3303. https://doi.org/10.1021/nl500704r
Yao, Maoqing ; Huang, Ningfeng ; Cong, Sen ; Chi, Chun Yung ; Seyedi, M. Ashkan ; Lin, Yen Ting ; Cao, Yu ; Povinelli, Michelle L. ; Dapkus, P. Daniel ; Zhou, Chongwu. / GaAs nanowire array solar cells with axial p-i-n junctions. In: Nano Letters. 2014 ; Vol. 14, No. 6. pp. 3293-3303.
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