Engineering & Materials Science
MISFET devices
100%
Molecular beam epitaxy
81%
Chemical vapor deposition
60%
Hysteresis
49%
Electron cyclotron resonance
47%
Scanning tunneling microscopy
46%
Semiconductor materials
46%
Ultrahigh vacuum
41%
Interface states
40%
Plasma enhanced chemical vapor deposition
37%
Metals
33%
X ray photoelectron spectroscopy
31%
Transconductance
31%
Field effect transistors
27%
Vacuum
23%
Characterization (materials science)
22%
Capacitance
22%
Composite materials
15%
Electric potential
13%
Chemical Compounds
Interface Trap
87%
Molecular Beam Epitaxy
75%
Field Effect
51%
Chemical Vapour Deposition
47%
Hysteresis
34%
Conductance
33%
Vacuum
27%
Electron Cyclotron Resonance
27%
Transconductance
26%
Interface State
26%
Plasma Enhanced Chemical Vapour Deposition
21%
Nonconductor
19%
Scanning Tunneling Microscopy
17%
Dielectric Material
15%
X-Ray Photoelectron Spectroscopy
12%
Length
10%
Composite Material
8%
Application
5%
Physics & Astronomy
MIS (semiconductors)
58%
molecular beam epitaxy
44%
vapor deposition
40%
traps
39%
field effect transistors
30%
hysteresis
20%
n-type semiconductors
16%
transconductance
14%
electron cyclotron resonance
14%
ultrahigh vacuum
13%
scanning tunneling microscopy
12%
depletion
11%
photoelectron spectroscopy
10%
inversions
10%
capacitance
10%
insulators
9%
tubes
9%
low frequencies
9%
vacuum
8%
composite materials
8%
characterization
7%
electric potential
7%
x rays
5%
performance
5%