GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

D. G. Park, M. Tao, J. Reed, K. Suzue, A. E. Botchkarev, Z. Fan, G. B. Gao, S. J. Chey, J. Van Nostrand, D. G. Cahill, H. Morkoç

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