GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

D. G. Park, M. Tao, J. Reed, K. Suzue, A. E. Botchkarev, Z. Fan, G. B. Gao, S. J. Chey, J. Van Nostrand, D. G. Cahill, H. Morkoç

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface trap concentrations, frequency dispersion, and hysteresis. By taking advantage of an in-situ process approach, we successfully gated insulator — GaAs structures with excellent interfacial properties. The structures utilize a Si interface layer or a composite Si/Ge layer grown on GaAs followed by a Si3N4 dielectric layer, all using a III–V molecular beam epitaxy (MBE) system connected by an ultrahigh vacuum transfer tube to an adjacent electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. This pseudo-in-situ feature in concert with recently implemented vacuum connected scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) allows investigations of the essential interface layers. High/low frequency capacitance-voltage, conductance versus frequency, and metal-insulator-semiconductor field-effect transistors (MISFETs) were used for a comprehensive characterization of the n-type MIS structures. From the stringent conductance measurements, interface state densities in the high 1010 eV−1 cm−2 have been obtained. The hysteresis is about 150 mV for a field swing of +4 to −4 MV/cm. The frequency dispersion is nearly zero except near inversion where its value is about 100 mV. Self aligned gate depletion mode MISFETs having 3 μm gate lengths exhibited transconductances of 169 mS/mm for the pseudomorphic InGaAs channels and about 100–140 mS/mm for GaAs channels.

Original languageEnglish (US)
Pages (from-to)1275-1280
Number of pages6
JournalJournal of Crystal Growth
Volume150
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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