Future ultra-large scale integration: Transport physics in semiconductor nanostructures

David K. Ferry, Yukihiko Takagaki, Jing Rong Zhou

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The progress in Si ULSI, and the parallel progress in GaAs LSI, has pushed the gate length in current devices toward 0.1μm Research laboratories have gone even further, and FETs with gate lengths as short as 20 nm have heen demonstrated. It is apparent that within the next decade or so, devices with gate lengths approaching this scale will be made in the production environment. These devices are likely to be susceptible to new physical effects that are now being studied in nanostructures, or mesoscopic devices as they are usually called. The first new effect, already seen in the short-gate length devices, is tunneling through the gate depletion region. In this paper, we try to summarize the major physical effects, some approaches to studying them, and the role they may play in future industrial devices.

Original languageEnglish (US)
Pages (from-to)873-878
Number of pages6
JournalJapanese Journal of Applied Physics
Volume33
Issue number1
DOIs
StatePublished - Jan 1 1994

Keywords

  • Fluctuations
  • MOSFETs
  • Mesoscopic devices
  • Quantum transport
  • Semiconductor devices

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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