TY - JOUR
T1 - Fundamentals of lateral and vertical heterojunctions of atomically thin materials
AU - Pant, Anupum
AU - Mutlu, Zafer
AU - Wickramaratne, Darshana
AU - Cai, Hui
AU - Lake, Roger K.
AU - Ozkan, Cengiz
AU - Tongay, Sefaattin
N1 - Funding Information:
This work is supported in part by National Science Foundation (DMR-552220). This work is supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA and the NSF ECCS-1124733.
Publisher Copyright:
© The Royal Society of Chemistry 2016.
PY - 2016/2/21
Y1 - 2016/2/21
N2 - At the turn of this century, Herbert Kroemer, the 2000 Nobel Prize winner in Physics, famously commented that "the interface is the device". This statement has since opened up unparalleled opportunities at the interface of conventional three-dimensional (3D) materials (H. Kroemer, Quasi-Electric and Quasi-Magnetic Fields in Non-Uniform Semiconductors, RCA Rev., 1957, 18, 332-342). More than a decade later, Sir Andre Geim and Irina Grigorieva presented their views on 2D heterojunctions which further cultivated broad interests in the 2D materials field. Currently, advances in two-dimensional (2D) materials enable us to deposit layered materials that are only one or few unit-cells in thickness to construct sharp in-plane and out-of-plane interfaces between dissimilar materials, and to be able to fabricate novel devices using these cutting-edge techniques. The interface alone, which traditionally dominated overall device performance, thus has now become the device itself. Fueled by recent progress in atomically thin materials, we are now at the ultimate limit of interface physics, which brings to us new and exciting opportunities, with equally demanding challenges. This paper endeavors to provide stalwarts and newcomers a perspective on recent advances in synthesis, fundamentals, applications, and future prospects of a large variety of heterojunctions of atomically thin materials.
AB - At the turn of this century, Herbert Kroemer, the 2000 Nobel Prize winner in Physics, famously commented that "the interface is the device". This statement has since opened up unparalleled opportunities at the interface of conventional three-dimensional (3D) materials (H. Kroemer, Quasi-Electric and Quasi-Magnetic Fields in Non-Uniform Semiconductors, RCA Rev., 1957, 18, 332-342). More than a decade later, Sir Andre Geim and Irina Grigorieva presented their views on 2D heterojunctions which further cultivated broad interests in the 2D materials field. Currently, advances in two-dimensional (2D) materials enable us to deposit layered materials that are only one or few unit-cells in thickness to construct sharp in-plane and out-of-plane interfaces between dissimilar materials, and to be able to fabricate novel devices using these cutting-edge techniques. The interface alone, which traditionally dominated overall device performance, thus has now become the device itself. Fueled by recent progress in atomically thin materials, we are now at the ultimate limit of interface physics, which brings to us new and exciting opportunities, with equally demanding challenges. This paper endeavors to provide stalwarts and newcomers a perspective on recent advances in synthesis, fundamentals, applications, and future prospects of a large variety of heterojunctions of atomically thin materials.
UR - http://www.scopus.com/inward/record.url?scp=84958568674&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958568674&partnerID=8YFLogxK
U2 - 10.1039/c5nr08982d
DO - 10.1039/c5nr08982d
M3 - Article
C2 - 26831401
AN - SCOPUS:84958568674
VL - 8
SP - 3870
EP - 3887
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 7
ER -